1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings最新文献_第3页

Efficient thin epilayer multicrystalline silicon solar cells 高效薄膜多晶硅太阳能电池

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610050

G. Ballhorn, K. Weber, S. Armand, M. Stuckings, M. Stocks, A. Blakers

{"title":"Efficient thin epilayer multicrystalline silicon solar cells","authors":"G. Ballhorn, K. Weber, S. Armand, M. Stuckings, M. Stocks, A. Blakers","doi":"10.1109/COMMAD.1996.610050","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610050","url":null,"abstract":"Liquid Phase Epitaxy (LPE) is a suitable technique for the growth of thin silicon films for photovoltaics, offering low growth temperatures, high utilisation of silicon, and low cost and complexity. Former modelling results showed that it should be possible to reach efficiencies in excess of 18% although using an opaque as a substrate and no light trapping schemes. However, silicon layers grown by LPE on suitable low cost substrates such as low-grade multicrystalline silicon are often very rough, making the processing of the layers difficult. We have used of a modified LPE technique which incorporates intermittent meltback into the growth process to grow silicon on cast multicrystalline wafers. The use of this technique has resulted in a significantly improved surface morphology, as was confirmed by scanning electron microscopy. This improvement can be explained by considering the transport of solute in the melt during the growth and meltback stages. Solar cells fabricated on these layers have achieved efficiencies up to 15.4%, despite the absence of any light confinement. The results also indicate that further performance boosts up to 17% are possible through further refinement of the cell processing techniques.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128295219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The effect of irradiation temperature on post-irradiation strain levels in Ge/sub x/Si/sub 1-x//Si strained layer heterostructures 辐照温度对Ge/sub -x/ Si/sub -x/ Si应变层异质结构辐照后应变水平的影响

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610092

J. M. Glasko, J. Zou, D. Cockayne, J. Fitzgerald, R. Elliman

{"title":"The effect of irradiation temperature on post-irradiation strain levels in Ge/sub x/Si/sub 1-x//Si strained layer heterostructures","authors":"J. M. Glasko, J. Zou, D. Cockayne, J. Fitzgerald, R. Elliman","doi":"10.1109/COMMAD.1996.610092","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610092","url":null,"abstract":"Double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM), and Rutherford backscattering spectroscopy and channelling (RBS-C) were used to study the effect of irradiation temperature and ion-energy on the perpendicular strain (/spl epsiv//sub /spl perp//) in Ge/sub x/Si/sub 1-x//Si strained layer heterostructures. Room temperature irradiation was shown to increase /spl epsiv//sub /spl perp//. This effect was adequately modelled by assuming that irradiation caused additional strain due to excess interstitial distribution. The effects of irradiating at 253/spl deg/C were more complex, resulting in: (a) an increase in /spl epsiv//sub /spl perp// when the radiation damage profile was confined to the alloy layer; or (b) a decrease in /spl epsiv//sub /spl perp// when the damage profile extended through the alloy/substrate interface. Strain relaxation at elevated temperature is believed to be effected by loop-like defects which nucleate at or near the alloy/substrate interface during high energy irradiation.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130585521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Tunable semiconductor Sinai billiards 可调谐半导体西奈台球

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610099

R. P. Taylor, R. Newbury, A. Sachrajda, Y. Feng, P. Coleridge

引用次数: 1

Far-infrared measurements of cyclotron resonance and impurity transitions in bulk n-GaAs in pulsed magnetic fields 脉冲磁场中体n-GaAs中回旋共振和杂质跃迁的远红外测量

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610136

Roger A Lewis, R. J. Heron, R. G. Clark, R. Starrett, A. Skougarevsky

引用次数: 0

An in-situ and ex-situ transmission electron microscopy study of the substrate orientational dependence of the solid-phase epitaxial growth of amorphized GaAs 非晶化砷化镓固相外延生长中衬底取向依赖性的原位和非原位透射电镜研究

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610160

K. Belay, M. Ridgway, D. Llewellyn

引用次数: 0

Effects of carbon impurity on GaAs/AlGaAs multiple quantum well lasers grown by molecular beam epitaxy 碳杂质对分子束外延生长GaAs/AlGaAs多量子阱激光器的影响

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610065

D.H. Zhang, C.Y. Li, S. Yoon

引用次数: 0

Surface phase diagram for ZnSe MBE growth ZnSe MBE生长的表面相图

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610152

J. Riley, D. Wolfframm, D. Westwood, A. Evans

引用次数: 1

Determination of basic parameters of ion implanted silica waveguides by dark mode spectroscopy method 暗模光谱法测定离子注入二氧化硅波导的基本参数

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610174

J. Gazecki, M. Zamora, G. K. Reeves, P. Leech, J. M. Kubica

引用次数: 0

Modeling of a reflection MQW modulator with multiple pass bands 多通带反射MQW调制器的建模

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610082

M. G. Xu, U. F. Siliquini, John Dell

引用次数: 1

Misfit dislocations nucleated from the surface in strained-layer heterostructures 在应变层异质结构中，错配位错从表面成核

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610129

J. Zou, D. Cockayne

引用次数: 0