在应变层异质结构中，错配位错从表面成核

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610129

J. Zou, D. Cockayne

{"title":"在应变层异质结构中，错配位错从表面成核","authors":"J. Zou, D. Cockayne","doi":"10.1109/COMMAD.1996.610129","DOIUrl":null,"url":null,"abstract":"The nucleation of misfit dislocations from the surface in strained-layer heterostructures is considered theoretically. When the interface between the epitaxial layer and the substrate is included, the model suggested by Matthews and his co-workers needs to be modified.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"238 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Misfit dislocations nucleated from the surface in strained-layer heterostructures\",\"authors\":\"J. Zou, D. Cockayne\",\"doi\":\"10.1109/COMMAD.1996.610129\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The nucleation of misfit dislocations from the surface in strained-layer heterostructures is considered theoretically. When the interface between the epitaxial layer and the substrate is included, the model suggested by Matthews and his co-workers needs to be modified.\",\"PeriodicalId\":171952,\"journal\":{\"name\":\"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings\",\"volume\":\"238 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1996.610129\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1996.610129","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

从理论上考虑了应变层异质结构中表面错配位错的成核。当考虑外延层与衬底之间的界面时，Matthews及其同事提出的模型需要进行修改。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Misfit dislocations nucleated from the surface in strained-layer heterostructures

The nucleation of misfit dislocations from the surface in strained-layer heterostructures is considered theoretically. When the interface between the epitaxial layer and the substrate is included, the model suggested by Matthews and his co-workers needs to be modified.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

自引率

0.00%

发文量