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Low-disorder quantum wire with gate-tunable width and electron density 具有门可调宽度和电子密度的低无序量子线
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610098
G. R. Facer, B. E. Kane, A. Dzurak, R. G. Clark, N. Lumpkin, L. Pfeiffer, K. West
{"title":"Low-disorder quantum wire with gate-tunable width and electron density","authors":"G. R. Facer, B. E. Kane, A. Dzurak, R. G. Clark, N. Lumpkin, L. Pfeiffer, K. West","doi":"10.1109/COMMAD.1996.610098","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610098","url":null,"abstract":"We have fabricated quasi-one dimensional (1D) quantum wires based upon a novel GaAs/AlGaAs heterostructure in which carriers are induced by an epitaxially-grown n/sup +/-GaAs gate rather than by modulation doping, thus minimising disorder. By using side-gates to further constrain the electrons at the centre of the wires, we observe at low temperatures a quantisation of the resistance, indicative of ballistic transport through the constriction. Motivated by theoretical predictions concerning electron correlation effects in 1D, we report initial studies of the dependence of the observed conductance plateaux upon temperature and electron density.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114742924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n/sup +/GaAs Schottky diodes 从Al/LT GaAs/n/sup +/GaAs肖特基二极管的性质推断退火低温生长GaAs中的隙态输运
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610141
P. Arifin, T. Tansley, E. Goldys
{"title":"Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n/sup +/GaAs Schottky diodes","authors":"P. Arifin, T. Tansley, E. Goldys","doi":"10.1109/COMMAD.1996.610141","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610141","url":null,"abstract":"We have probed transport mechanisms in Al/low temperature (LT) grown GaAs/n/sup +/GaAs Schottky diodes through their I-V characteristics as a function of temperature and through their AC conductivity at room temperature. The structures show features of rectification and series resistance. The former is analysed in terms of thermionic emission-tunneling theory and shows the temperature dependent ideality factor close to three, characteristic of tunneling through the depletion barrier of the n/sup +/ substrate. Electrons are injected through this barrier into gap states in the LT GaAs layer. The series resistance versus temperature shows an Arrhenius type behaviour with an activation energy of 32 meV, while the frequency-dependent AC conductivity behaves as /spl omega//sup s/ with s=0.65. These observations are consistent with hopping through gap states.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129179646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Slow trap profiling-a new technique for characterising slow traps in MOS dielectrics 慢阱分析——一种表征MOS电介质中慢阱的新技术
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610108
P. Tanner, S. Dimitrijev, H. B. Harrison
{"title":"Slow trap profiling-a new technique for characterising slow traps in MOS dielectrics","authors":"P. Tanner, S. Dimitrijev, H. B. Harrison","doi":"10.1109/COMMAD.1996.610108","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610108","url":null,"abstract":"The authors present a new technique for characterising slow traps in MOS structures which has several important advantages over existing measurement techniques. By stepping the gate voltage of a MOS capacitor and recording the resultant current transients, a slow trap profile can be generated that simultaneously shows the trap densities and their response times at various voltages, even in the strong inversion region. Results are shown for the case of a device damaged by plasma etching and comparisons made with the commonly used quasi-static C-V technique.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129073578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electronic and optical properties of defects formed in Si during low energy noble gas ion bombardment 低能惰性气体离子轰击硅中形成缺陷的电子和光学性质
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610094
P. Deenapanray, N. Perret, F. D. Auret, J. Malherbe, M. du Plessis
{"title":"Electronic and optical properties of defects formed in Si during low energy noble gas ion bombardment","authors":"P. Deenapanray, N. Perret, F. D. Auret, J. Malherbe, M. du Plessis","doi":"10.1109/COMMAD.1996.610094","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610094","url":null,"abstract":"We have used deep level transient spectroscopy (DLTS) and photoluminescence (PL) to determine the electronic and optical properties of the defects created during 1 keV He-, Ne- and Ar-ion bombardment. Except for their different relative concentrations, the defects induced by He- and Ne-ion bombardment were found to be similar. The different set of defects introduced by Ar ions has been associated with their higher rates of nuclear energy deposition in Si. Some of the low energy defects were found to be electronically similar to primary defects formed during 5.4 MeV alpha-particle irradiation, while some others are proposed to be noble gas species related. PL studies have shown that the intensities of the G- and C-lines decreased with increasing irradiation dose of Ne ions after reaching a maximum at 1/spl times/10/sup 12/ cm/sup -2/. The G-line intensity was found to decrease with the mass of noble gas used.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116270399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of quantum well materials for maximum change in refractive index with minimal loss 折射率变化最大，损耗最小的量子阱材料设计
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610077
A. Mitchell, E. Goldys, M. Austin, G.J. Nott
{"title":"Design of quantum well materials for maximum change in refractive index with minimal loss","authors":"A. Mitchell, E. Goldys, M. Austin, G.J. Nott","doi":"10.1109/COMMAD.1996.610077","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610077","url":null,"abstract":"Quantum well material have become attractive materials for integrated optic devices. Most modulator devices based on quantum well materials utilise the electric field dependent absorption due the quantum confined Stark effect. Modulators for wavelength division multiplexing (WDM) utilising resonant cavities, require highly electrorefractive materials that exhibit minimal loss at the active wavelength. The Stark effect in quantum wells also produces electro-refraction, but this is often unusable due to the increased absorption. In this paper we investigate the engineering and optimisation of quantum well materials to produce a high change in refractive index with applied field, with minimal loss.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115688355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
{111} and (311) rod-like defects in silicon ion implanted silicon {111}和(311)硅离子注入硅中的棒状缺陷
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610131
C. Chou, D. Cockayne, J. Zou, P. Kringhøj, C. Jagadish
{"title":"{111} and (311) rod-like defects in silicon ion implanted silicon","authors":"C. Chou, D. Cockayne, J. Zou, P. Kringhøj, C. Jagadish","doi":"10.1109/COMMAD.1996.610131","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610131","url":null,"abstract":"Rodlike defects in Si ion implanted Si have been studied by transmission electron microscopy and molecular dynamics calculations. Three aspects of these defects are presented here: (1) The defects with {111} habit planes have been identified and the interstitial nature of these defects has been confirmed by matching of the experimental and the calculated images based on the model established by atomistic calculations. (2) The defects with {311} habit planes have complicated high resolution electron microscopy images. This is explained by the coexistence of the Tan model and the Takeda model along an interstitial chain. A bond reconstruction is involved to transform the Tan model into the Takeda model. The energy barrier for this reconstruction is about 1.5 eV. (3) The early stage of the formation of a <011> interstitial chain has been studied by molecular dynamics calculations, when two interstitial atoms form a dimer an interstitial chain with a unit length of the Tan model or the Takeda model is formed, leaving two dangling bonds at two ends promoting other interstitial atoms to stick on to the dimer along the <011> direction.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"89 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127439239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Population inversion among electronic subbands in optically pumped semiconductor quantum wells 光泵浦半导体量子阱中电子子带的居群反转
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610167
W. Xu, C. Zhang
{"title":"Population inversion among electronic subbands in optically pumped semiconductor quantum wells","authors":"W. Xu, C. Zhang","doi":"10.1109/COMMAD.1996.610167","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610167","url":null,"abstract":"A theoretical study on population inversion among different electronic subbands, induced by hot-electron interactions with LO-phonons and with photons, is presented for an optically pumped AlGaAs-GaAs double quantum well structure which may behave as a three-level system to generate far-infrared laser radiations. The results obtained indicate that at a fixed pumping intensity, the population inversion among different electronic subbands can be tuned by varying electron temperature through, e.g., applying an in-plane control voltage.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130640356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Surface passivation of III-V compound semiconductors III-V型化合物半导体的表面钝化
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610126
A. Kapila, V. Malhotra
{"title":"Surface passivation of III-V compound semiconductors","authors":"A. Kapila, V. Malhotra","doi":"10.1109/COMMAD.1996.610126","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610126","url":null,"abstract":"Passivation of GaAs and InP surfaces have been accomplished using both wet and dry techniques. The wet techniques include ammonium sulfide based solutions, whereas the dry techniques involve the use H/sub 2/ and H/sub 2/S plasmas. These treatments, followed by the deposition of ECR-PECVD silicon nitride, result in significant reduction in the SiN/GaAs (InP) interfacial defect density. The technique is also used for passivating surface-sensitive devices, such as AlGaAs/GaAs heterojunction bipolar transistors.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128704142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs MBE生长InGaAs/GaAs中椭圆形缺陷的阴极发光研究
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610091
J. J. Russell-Harriott, J. Zou, D. Cockayne, A. Moon, B. Usher
{"title":"Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs","authors":"J. J. Russell-Harriott, J. Zou, D. Cockayne, A. Moon, B. Usher","doi":"10.1109/COMMAD.1996.610091","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610091","url":null,"abstract":"Semiconductor InGaAs/GaAs heterostructures grown by molecular beam epitaxy have been studied using low temperature (5K) cathodoluminescence as part of a project to determine the mechanisms of misfit dislocation nucleation. The samples studied contain oval defects which give rise to a large number of misfit dislocations. Also associated with the oval defects is a highly luminescent halo which gives rise to a peak on the low energy side of the InGaAs peak in the CL spectrum. The dislocation density is shown to oscillate along the sample and this oscillation can be partly explained by the presence of the oval defects.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114253293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Luminescence at 1539 nm from erbium and oxygen implanted GaN 铒氧注入GaN在1539nm处的发光
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610150
J. Torvik, C. Qiu, R. Feuerstein, J. Pankove, F. Namavar
{"title":"Luminescence at 1539 nm from erbium and oxygen implanted GaN","authors":"J. Torvik, C. Qiu, R. Feuerstein, J. Pankove, F. Namavar","doi":"10.1109/COMMAD.1996.610150","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610150","url":null,"abstract":"Strong room temperature Er-related photoluminescence (PL) and electroluminescence (EL) at 1539 nm was observed from Er and O implanted GaN. For device fabrication it is important that the Er-related absorption and emission processes be efficient. Single exponential PL or EL time decays with 1/e lifetimes of 2.33 ms or 1.74 ms indicate a highly efficient radiative process. The absorption process is studied comparing the efficiency of below-bandgap excitation, above-bandgap excitation, and electrical (impact) excitation.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124204217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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