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Realistic continuum hole states in Si-SiGe quantum wells Si-SiGe量子阱中真实连续空穴态
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610138
V. I. Galiev, E. Goldys, A. Kruglov, A. F. Polupanov, T. Tansley
{"title":"Realistic continuum hole states in Si-SiGe quantum wells","authors":"V. I. Galiev, E. Goldys, A. Kruglov, A. F. Polupanov, T. Tansley","doi":"10.1109/COMMAD.1996.610138","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610138","url":null,"abstract":"An efficient numerical-analytical method is presented for finding continuum states in quantum-well systems with arbitrary potential profiles, described by coupled Schrodinger equations, such as hole states in semiconductor quantum wells. The method developed is used to examine the scattering of holes in strained layer Si/Si/sub 1-x/Ge/sub x/ quantum-well heterostructures.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132103765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
TiO/sub 2/ thin films prepared by sol-gel method for oxygen microsensor application 溶胶-凝胶法制备氧微传感器用TiO/sub /薄膜
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610172
M. Atashbar, H. Sun, W. Wlodarski
{"title":"TiO/sub 2/ thin films prepared by sol-gel method for oxygen microsensor application","authors":"M. Atashbar, H. Sun, W. Wlodarski","doi":"10.1109/COMMAD.1996.610172","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610172","url":null,"abstract":"Polycrystalline TiO/sub 2/ thin films have been prepared via a sol-gel method. The film morphology, crystalline phase and chemical composition have been characterized through scanning electron microscopy, X-ray diffraction, and Rutherford backscattering spectrometry. The oxygen sensing characteristics and sensitivity enhancement have been investigated and optimized. The gas sensitivity of TiO/sub 2/ thin films for the detection of oxygen in the concentration range 10 ppm to 1%, has been evaluated. A sensitivity range between 5 to 8 at working temperatures of 270/spl deg/C to 320/spl deg/C has been achieved.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125174885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Optical properties of III nitrides grown by reactive MBE 反应MBE生长III氮化物的光学性质
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610146
H. Morkoç
{"title":"Optical properties of III nitrides grown by reactive MBE","authors":"H. Morkoç","doi":"10.1109/COMMAD.1996.610146","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610146","url":null,"abstract":"Properties of GaN and GaN/AlGaN structures deposited by reactive MBE where the reactive nitrogen source is provided by thermal disassociation of ammonia on the substrate surface. Bulk GaN layers with excellent excitonic transitions on sapphire, GaN buffer layers deposited by MOCVD, and ZnO substrates have been obtained. So have the GaN/AlGaN separate confinement heterostructures exhibiting optical pumping threshold powers of under 90 kW/cm/sup 2/ diode along with DH AlGaN/GaN LEDs. Recently, pin diode UV detectors exhibiting what appears to be excitonic response at room temperature with a sensitivity of about 0.1 A/W near the band edge have been obtained.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121971151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magnetotransport properties of p-type strained SiGe quantum wells p型应变SiGe量子阱的磁输运性质
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610155
P. Coleridge, Y. Feng, H. Lafontaine, A. Sachrajda, R. Williams, P. Zawadzki
{"title":"Magnetotransport properties of p-type strained SiGe quantum wells","authors":"P. Coleridge, Y. Feng, H. Lafontaine, A. Sachrajda, R. Williams, P. Zawadzki","doi":"10.1109/COMMAD.1996.610155","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610155","url":null,"abstract":"A brief survey is given of ways SiGe alloys can be integrated into microelectronic devices. The growth of a series of modulation doped p-type strained Si/sub .88/Ge/sub .12/ quantum wells is described and the results of characterisation using low temperature magnetotransport presented. Comments are also made about the appearance, in some samples, of an insulating phase at low temperatures.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121261167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Interdiffusion in GaAs bipolar structures GaAs双极结构中的相互扩散
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610097
W. Li, R. M. Cohen, D. Simons, P. Chi
{"title":"Interdiffusion in GaAs bipolar structures","authors":"W. Li, R. M. Cohen, D. Simons, P. Chi","doi":"10.1109/COMMAD.1996.610097","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610097","url":null,"abstract":"Emitter, base, and collector layers of GaAs with a nominal thickness of 0.5 /spl mu/m each were grown by organometallic vapor phase epitaxy (OMVPE). Each layer contained concentration spikes of the interdiffusion marker, indium. Annealing was performed in an open tube system for 1 h at T=900/spl deg/C using a controlled arsenic pressure. The dopants used, tellurium and carbon, reside on the group V sublattice and they are not expected to induce the so-called kick-out diffusion mechanism. The measured interdiffusion results are consistent with native defect concentrations' which approach their equilibrium values during the annealing process. A small emitter push effect can be measured for npn structures. We find that a Ga vacancy, with a charge of -1, provides a consistent explanation for interdiffusion in both n-type and p-type GaAs over the range of carrier density n=1/spl times/10/sup 19/ cm/sup -3/ to p=1/spl times/10/sup 19/ cm/sup -3/.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121299358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical and thermal response of thick YBCO-Bismuth junctions 厚ybco -铋结的光学和热响应
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610165
M. Kaila, J. Cochrane, G. Russell
{"title":"Optical and thermal response of thick YBCO-Bismuth junctions","authors":"M. Kaila, J. Cochrane, G. Russell","doi":"10.1109/COMMAD.1996.610165","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610165","url":null,"abstract":"Thick (50 micron) films of YBCO (Yttrium Barium Copper Oxide) and Bismuth were prepared as a two-stage thermopile and single stage junctions on Zirconia substrates. The critical temperature of the YBCO films was found to be 85 K. The thermal and optical response of the junctions were studied using a He-Ne Laser of 10 mW power. In the two-stage thermopile (T-sT) configuration, in thermal response, a signal of 20 /spl mu/V was observed for the junction near the critical temperature, corresponding to a temperature difference of a fraction of a degree. In the single stage geometry (S-sG) no significant thermal voltages were found near Tc but photothermionic transitions were observed.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126212322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The influence of different substrates on GaN films grown by low temperature laser and plasma enhanced MOCVD 不同衬底对低温激光和等离子体增强MOCVD生长GaN膜的影响
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610153
H. Zuo, B. Zhou, E. Goldys, M. J. Paterson, T. Tansley
{"title":"The influence of different substrates on GaN films grown by low temperature laser and plasma enhanced MOCVD","authors":"H. Zuo, B. Zhou, E. Goldys, M. J. Paterson, T. Tansley","doi":"10.1109/COMMAD.1996.610153","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610153","url":null,"abstract":"We report on the present status of a systematic investigation of GaN thin films grown on sapphire, semi-insulating GaAs and Si substrates under various pre-growth conditions by low temperature laser and plasma enhanced metal-organic chemical vapour deposition. These pre-growth conditions include deposition of buffer layers and surface hydrogenation.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116415138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The optical and electrical characteristics of a-Si:H films prepared by ECR CVD ECR CVD制备a-Si:H薄膜的光学和电学特性
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610171
Moonsang Kang, Jaeyeong Kim, C. An, T. Lim, I. Oh, B. Jeon, Ilhyun Jung, Yong-Seo Koo
{"title":"The optical and electrical characteristics of a-Si:H films prepared by ECR CVD","authors":"Moonsang Kang, Jaeyeong Kim, C. An, T. Lim, I. Oh, B. Jeon, Ilhyun Jung, Yong-Seo Koo","doi":"10.1109/COMMAD.1996.610171","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610171","url":null,"abstract":"The optical and electrical properties of hydrogenated amorphous silicon films, deposited by ECR plasma CVD, were investigated as a function of H/sub 2//SiH/sub 4/ ratio and as a function of substrate temperature. Photoconductivity increased with increasing SiH/sub 4/ gas content or with increasing substrate temperature, due to the decrease of optical band gap, FWHM and the ratio of the concentration of dihydride to that of monohydride. Dark conductivity decreased with increasing substrate temperature due to the increase of surface roughness, and was quite independent of H/sub 2//SiH/sub 4/ ratio. The influence factors of photoconductivity were hydride bonding configuration, optical band gap and FWHM. The dominant factor of dark conductivity was the surface roughness.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130878324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of V/III ratio on the optical properties of LPMOVPE grown undoped GaAs epi-films V/III比对未掺杂GaAs外延膜光学性能的影响
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610135
M. Hudait, P. Modak, S. Hardikar, S. .. Krupanidhi
{"title":"Effect of V/III ratio on the optical properties of LPMOVPE grown undoped GaAs epi-films","authors":"M. Hudait, P. Modak, S. Hardikar, S. .. Krupanidhi","doi":"10.1109/COMMAD.1996.610135","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610135","url":null,"abstract":"Low temperature photoluminescence spectroscopy is used extensively to study the distribution of defects, concerning the type and impurity in a semiconductor film. Typical photoluminescence spectra are observed in a near band edge region. The undoped GaAs epitaxial layers grown by low pressure metal organic vapor phase epitaxy under different V/III ratios, an optimum ratio corresponding to a minimum number of shallow impurities was clearly identified. The V/III ratio has strong effect on the optical properties of undoped GaAs epitaxial layers. When the V/III ratio was varied from 45 to 87, the electron concentration, n, of undoped GaAs increased with increasing V/III ratio. Below the V/III ratio of 45 in our case, the sample exhibited a p-type behavior, which has been identified by photoluminescence as well as depth profiling by Electro-chemical Capacitance Voltage (ECV) profiler.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125473894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electron transport in low temperature grown GaAs 低温生长GaAs中的电子输运
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610142
P. Arifin, T. Tansley, E. Goldys
{"title":"Electron transport in low temperature grown GaAs","authors":"P. Arifin, T. Tansley, E. Goldys","doi":"10.1109/COMMAD.1996.610142","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610142","url":null,"abstract":"MBE grown low temperature GaAs layers have been annealed at various temperatures up to 600/spl deg/C and their structural and transport properties examined. Excess As precipitation is confirmed by TEM measurements. Both hopping and band transport are present in the material annealed at temperatures up to 500/spl deg/C. The measured mobility for 600/spl deg/C annealed material agrees well with predictions of Monte Carlo calculations taking full account of precipitate scattering.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115128761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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