不同衬底对低温激光和等离子体增强MOCVD生长GaN膜的影响

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610153

H. Zuo, B. Zhou, E. Goldys, M. J. Paterson, T. Tansley

{"title":"不同衬底对低温激光和等离子体增强MOCVD生长GaN膜的影响","authors":"H. Zuo, B. Zhou, E. Goldys, M. J. Paterson, T. Tansley","doi":"10.1109/COMMAD.1996.610153","DOIUrl":null,"url":null,"abstract":"We report on the present status of a systematic investigation of GaN thin films grown on sapphire, semi-insulating GaAs and Si substrates under various pre-growth conditions by low temperature laser and plasma enhanced metal-organic chemical vapour deposition. These pre-growth conditions include deposition of buffer layers and surface hydrogenation.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"138 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The influence of different substrates on GaN films grown by low temperature laser and plasma enhanced MOCVD\",\"authors\":\"H. Zuo, B. Zhou, E. Goldys, M. J. Paterson, T. Tansley\",\"doi\":\"10.1109/COMMAD.1996.610153\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the present status of a systematic investigation of GaN thin films grown on sapphire, semi-insulating GaAs and Si substrates under various pre-growth conditions by low temperature laser and plasma enhanced metal-organic chemical vapour deposition. These pre-growth conditions include deposition of buffer layers and surface hydrogenation.\",\"PeriodicalId\":171952,\"journal\":{\"name\":\"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings\",\"volume\":\"138 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1996.610153\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1996.610153","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文报道了利用低温激光和等离子体增强金属有机化学气相沉积技术在蓝宝石、半绝缘GaAs和Si衬底上生长GaN薄膜的研究现状。这些预生长条件包括缓冲层的沉积和表面氢化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

The influence of different substrates on GaN films grown by low temperature laser and plasma enhanced MOCVD

We report on the present status of a systematic investigation of GaN thin films grown on sapphire, semi-insulating GaAs and Si substrates under various pre-growth conditions by low temperature laser and plasma enhanced metal-organic chemical vapour deposition. These pre-growth conditions include deposition of buffer layers and surface hydrogenation.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

自引率

0.00%

发文量