Electron transport in low temperature grown GaAs

Abstract

MBE grown low temperature GaAs layers have been annealed at various temperatures up to 600/spl deg/C and their structural and transport properties examined. Excess As precipitation is confirmed by TEM measurements. Both hopping and band transport are present in the material annealed at temperatures up to 500/spl deg/C. The measured mobility for 600/spl deg/C annealed material agrees well with predictions of Monte Carlo calculations taking full account of precipitate scattering.