Realistic continuum hole states in Si-SiGe quantum wells

Abstract

An efficient numerical-analytical method is presented for finding continuum states in quantum-well systems with arbitrary potential profiles, described by coupled Schrodinger equations, such as hole states in semiconductor quantum wells. The method developed is used to examine the scattering of holes in strained layer Si/Si/sub 1-x/Ge/sub x/ quantum-well heterostructures.