厚ybco -铋结的光学和热响应

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610165

M. Kaila, J. Cochrane, G. Russell

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引用次数: 1

摘要

在氧化锆衬底上制备了厚(50微米)的YBCO(钇钡铜氧化物)和铋薄膜，作为两级热电堆和单级结。YBCO薄膜的临界温度为85 K。利用功率为10mw的He-Ne激光器研究了这些结的热响应和光学响应。在两级热电堆(T-sT)结构中，在热响应中，在临界温度附近的结处观察到20 /spl mu/V的信号，对应于几分之一度的温差。在单级几何(S-sG)中，在Tc附近没有发现明显的热电压，但观察到光热离子跃迁。

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Optical and thermal response of thick YBCO-Bismuth junctions

Thick (50 micron) films of YBCO (Yttrium Barium Copper Oxide) and Bismuth were prepared as a two-stage thermopile and single stage junctions on Zirconia substrates. The critical temperature of the YBCO films was found to be 85 K. The thermal and optical response of the junctions were studied using a He-Ne Laser of 10 mW power. In the two-stage thermopile (T-sT) configuration, in thermal response, a signal of 20 /spl mu/V was observed for the junction near the critical temperature, corresponding to a temperature difference of a fraction of a degree. In the single stage geometry (S-sG) no significant thermal voltages were found near Tc but photothermionic transitions were observed.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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