Magnetotransport properties of p-type strained SiGe quantum wells

Abstract

A brief survey is given of ways SiGe alloys can be integrated into microelectronic devices. The growth of a series of modulation doped p-type strained Si/sub .88/Ge/sub .12/ quantum wells is described and the results of characterisation using low temperature magnetotransport presented. Comments are also made about the appearance, in some samples, of an insulating phase at low temperatures.