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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings最新文献

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Thermal contribution to the side-tuning of the lasing mode in multielectrode DBR lasers: influence on modulation bandwidth and laser linewidth 热对多电极DBR激光器激光模式侧调谐的影响:对调制带宽和激光线宽的影响
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610074
S. Bozorgui, A. Destrez, Z. Toffano
{"title":"Thermal contribution to the side-tuning of the lasing mode in multielectrode DBR lasers: influence on modulation bandwidth and laser linewidth","authors":"S. Bozorgui, A. Destrez, Z. Toffano","doi":"10.1109/COMMAD.1996.610074","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610074","url":null,"abstract":"Stationary temperature distributions in the three-electrode DBR lasers are calculated analytically using Fourier transforms. It is theoretically shown that if the lasing mode is biased at the long wavelength side of the Bragg reflection peak, a significant increase in 3 dB modulation bandwidth and decrease in spectral linewidth can be obtained.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125068409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sol-gel derived WO/sub 3/ coatings on Ti:LiNbO/sub 3/ optical waveguide for gas sensing 气敏Ti:LiNbO/sub - 3/光波导上的溶胶凝胶衍生WO/sub - 3/涂层
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610173
Z. Chen, X. Ma, H. Sun, W. Wlodarski, M. Austin
{"title":"Sol-gel derived WO/sub 3/ coatings on Ti:LiNbO/sub 3/ optical waveguide for gas sensing","authors":"Z. Chen, X. Ma, H. Sun, W. Wlodarski, M. Austin","doi":"10.1109/COMMAD.1996.610173","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610173","url":null,"abstract":"WO/sub 3/ coatings on Ti:LiNbO/sub 3/ optical waveguides have been prepared from tungsten ethoxide by a sol-gel method. The annealed coatings display a triclinic perovskite crystalline structure determined by X-ray diffraction. Optical tests show that output power of the straight line waveguide decreases after deposition of the coatings (from 62 /spl mu/W to 25 /spl mu/W in the presence of saturated ethanol vapour).","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125161804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical characterization of the subthreshold damage in ion implanted p-type silicon 离子注入p型硅亚阈值损伤的电学特性
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610096
S. Fatima, C. Jagadish
{"title":"Electrical characterization of the subthreshold damage in ion implanted p-type silicon","authors":"S. Fatima, C. Jagadish","doi":"10.1109/COMMAD.1996.610096","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610096","url":null,"abstract":"The residual electrically active defects in implanted and annealed p-type Si (boron doped) have been studied with capacitance-voltage (CV) measurements and deep level transient spectroscopy (DLTS). P-type Si is implanted with 5.5 MeV Si ions to doses between 10/sup 12/ and 10/sup 14/ cm/sup -2/. These samples were annealed at elevated temperatures (900/spl deg/C). A critical dose is established indicating the transformation between point defects in to extended defects in contrast to n-type Si where a critical dose has been established for same species and under same annealing conditions below which no electrically active defects are seen.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125169632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Saturation of effective channel length increase due to hot carrier degradation in submicron LDD nMOSFETs 亚微米LDD nmosfet的热载流子退化导致有效沟道长度饱和增加
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610109
Jaeyeong Kim, Moonsang Kang, Yong-Seo Koo, C. An
{"title":"Saturation of effective channel length increase due to hot carrier degradation in submicron LDD nMOSFETs","authors":"Jaeyeong Kim, Moonsang Kang, Yong-Seo Koo, C. An","doi":"10.1109/COMMAD.1996.610109","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610109","url":null,"abstract":"The effective channel length of submicron LDD nMOSFETs after hot carrier degradation was measured. After the hot carrier stressing, the effective channel lengths were increased with time but saturated after a certain threshold time of about 1000 s. The saturation nature of hot carrier degradation in LDD nMOSFETs can be understood through the saturation of the effective channel length.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125753628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Design and fabrication of liquid media sensors based on shear horizontal surface acoustic wave devices 基于剪切水平表面声波装置的液体介质传感器的设计与制造
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610162
A. Campitelli, W. Wlodarski
{"title":"Design and fabrication of liquid media sensors based on shear horizontal surface acoustic wave devices","authors":"A. Campitelli, W. Wlodarski","doi":"10.1109/COMMAD.1996.610162","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610162","url":null,"abstract":"This paper reports on the design and fabrication of novel liquid media sensors based on Shear Horizontally Polarised Surface Acoustic Wave (SH-SAW) devices. The design and fabrication methodologies (etching and lift-off planar techniques) for the SH-SAW sensors are presented with an emphasis on optimisation techniques to enhance the sensitivity of the overall sensor system. Experimental results are presented showing the sensitivity to liquid viscosity and electrical permittivity and an improved method for liquid identification is established that utilises the sensor response in terms of frequency and attenuation for enhanced characteristic feature extraction.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121618689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Creation of adhesion resistant silica glass surfaces with ultraviolet laser cleaning 用紫外激光清洗产生抗粘附二氧化硅玻璃表面
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610168
D.R. Hafpenny, D. Kane, R. Lamb, B. Gong
{"title":"Creation of adhesion resistant silica glass surfaces with ultraviolet laser cleaning","authors":"D.R. Hafpenny, D. Kane, R. Lamb, B. Gong","doi":"10.1109/COMMAD.1996.610168","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610168","url":null,"abstract":"By using the ultraviolet irradiation from a frequency doubled copper vapour laser, in the fluence range used for laser cleaning, the surface chemistry of silica can be modified. Analysis has shown that the surface is dehydroxylated by the UV light changing it from hydrophilic to hydrophobic in nature. The modification of the surface has the effect of reducing the number of particles that adhere to the treated surface by up to 80%, for 0.3 /spl mu/m diameter particles, upon subsequent contamination of the surface.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124045180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Quantum confinement: mechanism for visible electroluminescence from spark-processed silicon 量子约束:火花加工硅的可见电致发光机制
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610114
J. Yuan, D. Haneman, I. Andrienko
{"title":"Quantum confinement: mechanism for visible electroluminescence from spark-processed silicon","authors":"J. Yuan, D. Haneman, I. Andrienko","doi":"10.1109/COMMAD.1996.610114","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610114","url":null,"abstract":"Visible electroluminescence, (EL) showing a broad spectrum with several peaks, occurs from spark-processed silicon. High resolution scanning tunneling microscopy shows that the surface is composed of many small particles, with a significant fraction in the range of two nm required for bandgap enlargement. Hence quantum confinement effects can explain the blue shift of the EL spectrum. The devices show durability, and applications for optical communication between Si wafers appear possible.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124099718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Fabrication of low-cost capacitive accelerometers by 3D microforming 三维微成形技术制备低成本电容式加速度计
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610166
W. Qu, C. Wenzel, K. Drescher
{"title":"Fabrication of low-cost capacitive accelerometers by 3D microforming","authors":"W. Qu, C. Wenzel, K. Drescher","doi":"10.1109/COMMAD.1996.610166","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610166","url":null,"abstract":"A capacitive accelerometer has been manufactured by combining the 3D Microforming process with a sacrificial layer technique. The entire structure of the sensor element was first grown electrochemically within the patterned resist on an electroplating base composed of rigid and sacrificial metal layers. Its movable parts were then obtained by removing the sacrificial layer using wet etching. This fabrication process employs no expensive equipment and avoids high processing temperatures. Sensors of a structural height of up to 40 /spl mu/m with an aspect ratio of 6 can be easily realised with this simple, economical, yet highly reliable method. This paper describes this low-cost microstructure technology which could be also applied to economically realise other micro elements with oscillating structures.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131435140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Fabrication, performance and modelling of high-speed GaAs MSM photodetectors 高速GaAs MSM光电探测器的制造、性能与建模
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610083
S. Winnall, Z. Kachwalla
{"title":"Fabrication, performance and modelling of high-speed GaAs MSM photodetectors","authors":"S. Winnall, Z. Kachwalla","doi":"10.1109/COMMAD.1996.610083","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610083","url":null,"abstract":"Short distance microwave and millimetre-wave fibre-optic links require high-speed photodetectors. Gallium Arsenide (GaAs) Metal-Semiconductor-Metal (MSM) photodetectors are not only capable of operating at frequencies of tens of GHz but also are intended for future planar integration with GaAs based Monolithic Microwave Integrated Circuits (MMICs). This paper presents results on MSM photodetectors of different geometries that were fabricated using optical lithography. They were tested and compared to an equivalent circuit to study the effect of device geometry on bandwidth and responsivity. The devices were measured to have a typical bandwidth of 9 GHz.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"110 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134161240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Simulation of Be diffusion in InGaAs epitaxial layers in the case of point defect nonequilibrium 点缺陷非平衡情况下InGaAs外延层中Be扩散的模拟
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610089
S. Gautier, S. Koumetz, J. Marcon, K. Ketata, M. Ketata, P. Launay
{"title":"Simulation of Be diffusion in InGaAs epitaxial layers in the case of point defect nonequilibrium","authors":"S. Gautier, S. Koumetz, J. Marcon, K. Ketata, M. Ketata, P. Launay","doi":"10.1109/COMMAD.1996.610089","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610089","url":null,"abstract":"Beryllium diffusion during post-growth annealing has been investigated in InGaAs epitaxial layers. Under point defect nonequilibrium conditions, a Kick-out Diffusion model considering neutral Be interstitial species and charged point defects has been studied. Then, a General Substitutional-Interstitial Diffusion model based on simultaneous diffusion by Dissociative and Kick-out mechanisms is proposed. Simulated curves are compared with experimental profiles and good agreement is obtained.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131761403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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