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Processing dependence of minority carrier lifetimes in multicrystalline silicon 多晶硅中少数载流子寿命的工艺依赖性
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610044
M. Stocks, A. Blakers, A. Cuevas
{"title":"Processing dependence of minority carrier lifetimes in multicrystalline silicon","authors":"M. Stocks, A. Blakers, A. Cuevas","doi":"10.1109/COMMAD.1996.610044","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610044","url":null,"abstract":"Multicrystalline silicon (mcSi) solar cell efficiency is primarily influenced by minority carrier lifetime of the material. Lifetimes in mcSi vary strongly during processing. Step by step monitoring has allowed identification of both beneficial and poor processing steps and lead to rapid improvements in cell efficiency. Phosphorous gettering significantly improves lifetimes in the mcSi substrates investigated, where effective lifetimes of 250 /spl mu/s in 1.5 /spl Omega/ cm mcSi have been observed. This has permitted the achievement of record open circuit voltages greater than 655 mV and efficiencies greater than 18% with 0.2 /spl Omega/ cm and 0.5 /spl Omega/ cm mcSi solar cells.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128721725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Growth of gallium antimonide (GaSb) by metalorganic chemical vapour deposition 金属有机化学气相沉积法生长锑化镓(GaSb)
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610157
A. Subekti, E. Goldys, T. Tansley
{"title":"Growth of gallium antimonide (GaSb) by metalorganic chemical vapour deposition","authors":"A. Subekti, E. Goldys, T. Tansley","doi":"10.1109/COMMAD.1996.610157","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610157","url":null,"abstract":"Growth of unintentionally doped GaSb by atmospheric pressure MOCVD using Trimethylgallium (TMGa) and Trimethylantimonide (TMSb) on various substrate is investigated. Optimum growth temperature and the V/III ratio window is given with respect to hole density, mobility and optical properties. The optimum growth rate was found to be 2.2 /spl mu/m/h with good surface morphology for samples grown at 500-540/spl deg/C and V/III ratio approximately equal to unity. The as grown samples are p-type, having room-temperature mobility and hole density at the optimum growth condition as above, of 500 cm/sup 2/ V/sup -1/ s/sup -1/ and 0.5-3.0/spl times/10/sup 17/ cm/sup -3/, respectively. The fundamental absorption band edge of grown layers in transmission spectra shows clear excitonic features at low temperatures. Very short growth time leads to quantum dot formation with the best quantum dots grown on Ge.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123902706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Ion implantation into gallium nitride 离子注入氮化镓
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610149
J.S. Williams, H. Tan, J. Zolper
{"title":"Ion implantation into gallium nitride","authors":"J.S. Williams, H. Tan, J. Zolper","doi":"10.1109/COMMAD.1996.610149","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610149","url":null,"abstract":"Implantation of GaN is important for selective doping and isolation applications. This paper reports on the extreme difficulty in removing ion implantation damage from Si-implanted GaN during annealing up to 1100/spl deg/C.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123447331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Electrical characterization of metal/AlN/6H-SiC (0001) heterostructures 金属/AlN/6H-SiC(0001)异质结构的电学特性
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610148
M. O. Aboelfotoh, R. S. Kern, R. F. Davis
{"title":"Electrical characterization of metal/AlN/6H-SiC (0001) heterostructures","authors":"M. O. Aboelfotoh, R. S. Kern, R. F. Davis","doi":"10.1109/COMMAD.1996.610148","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610148","url":null,"abstract":"Metal/AlN/n-type 6H-SiC (0001) (MIS) heterostructures have been prepared by epitaxially growing wurtzite AlN layers on both vicinal and on-axis 6H-SiC (0001) substrates using gas-source molecular beam epitaxy. The capacitance-voltage characteristics obtained for these MIS heterostructures are found to depend strongly on temperature in the range from 200 to 573 K, and to exhibit hysteresis effects consistent with the presence of slow interface traps. The amount of hysteresis is found to increase with decreasing temperature. This can be explained in terms of the shift of the Fermi level closer to the semiconductor conduction band with decreasing temperature, causing the emission rate of the trapped charge to be less dependent on temperature. Cross-sectional high-resolution transmission electron microscopy results show that the interface formed on the vicinal 6H-SiC (0001) substrate contains a higher density of defects than that on the on-axis substrate. However, these two interfaces are found to have a similar density of trapped negative charge of 3/spl times/10/sup 11/ cm/sup -2/ at room temperature, which decreases with increasing temperature. These results indicate that the interface between AlN and Si-terminated 6H-SiC (0001) is of a high quality suitable for device application.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122008616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Quantum noise in resonant tunnelling 共振隧穿中的量子噪声
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610113
H. Sun, G. J. Milburn
{"title":"Quantum noise in resonant tunnelling","authors":"H. Sun, G. J. Milburn","doi":"10.1109/COMMAD.1996.610113","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610113","url":null,"abstract":"A master equation method is used to describe current noise in resonant tunnelling diodes which contain a single bound state in the well. The state is below the Fermi level of the emitter and coupled to two electron reservoirs by quantum tunnelling through the two barriers. The two-time correlation function for the classical current in the device is calculated in terms of the fundamental quantum stochastic processes in the well. The results reproduce those previously obtained by a nonequilibrium Green's function approach. The model shows that the quantum Markov treatment may be applied to mesoscopic electronic systems with more succinct formalism.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132109723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low temperature preparation of the SiO/sub 2/ films with low interface trap density using ECR diffusion and ECR CVD method 采用ECR扩散和ECR CVD方法低温制备低界面阱密度SiO/sub /薄膜
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610122
B. Jeon, Ilhyun Jung, I. Oh, T. Lim
{"title":"Low temperature preparation of the SiO/sub 2/ films with low interface trap density using ECR diffusion and ECR CVD method","authors":"B. Jeon, Ilhyun Jung, I. Oh, T. Lim","doi":"10.1109/COMMAD.1996.610122","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610122","url":null,"abstract":"Silicon oxide films were grown by Electron Cyclotron Resonance (ECR) diffusion and the ECR CVD method at low temperature. An MOS capacitor with 250 /spl Aring/ of oxide grown by ECR diffusion had a lower interface trap density of 4.24/spl times/10/sup 9/ cm/sup -2//spl middot/eV/sup -1/ than direct PECVD and remote PECVD. The measured interface oxide charge density for this film was 6.88/spl times/10/sup 11/ cm/sup -2/. In the case of the ECR CVD method, interface trap density was lower than 2.01/spl times/10/sup 10/ cm/sup -2//spl middot/eV/sup -1/.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133474498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication and modelling of a prototype dual-band HgCdTe infrared detector structure 双频HgCdTe红外探测器结构原型的制作与建模
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610061
G. Parish, C. Musca, J.F. Siliquini, J. Antoszewski, J. Dell, B. Nener, L. Faraone, G. Gouws
{"title":"Fabrication and modelling of a prototype dual-band HgCdTe infrared detector structure","authors":"G. Parish, C. Musca, J.F. Siliquini, J. Antoszewski, J. Dell, B. Nener, L. Faraone, G. Gouws","doi":"10.1109/COMMAD.1996.610061","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610061","url":null,"abstract":"A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 /spl mu/m and 8-12 /spl mu/m, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The proposed structure employs a wider bandgap isolating layer between the two photosensitive layers such that an effective electrical barrier is formed thus prohibiting carrier transport between the two infrared absorbing layers. A comprehensive device model has been developed and the technology is demonstrated using a mature HgCdTe photoconductive device fabrication process. The fabricated detectors have an MWIR cutoff of 5.0 /spl mu/m, and LWIR cutoff of 10.5 /spl mu/m.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124311016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of sub-micron ohmic contacts to GaAs 亚微米欧姆接触到砷化镓的模拟
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610121
Y. Li, H. Harrison, G. K. Reeves
{"title":"Simulation of sub-micron ohmic contacts to GaAs","authors":"Y. Li, H. Harrison, G. K. Reeves","doi":"10.1109/COMMAD.1996.610121","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610121","url":null,"abstract":"Alloyed ohmic contacts to GaAs have been numerically simulated using the Boundary Element Methods. The simulation shows the voltage contours and current contribution in the contact region and external to it and provides characteristics which are unique to sub-micron ohmic contacts. An analytical model developed is in good agreement with the numeral simulation.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121415401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Recent progress in /spl delta/-doped compound semiconductors /spl δ /掺杂化合物半导体研究进展
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610088
G. Li, C. Jagadish
{"title":"Recent progress in /spl delta/-doped compound semiconductors","authors":"G. Li, C. Jagadish","doi":"10.1109/COMMAD.1996.610088","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610088","url":null,"abstract":"We report recent progress in growth of /spl delta/-doped compound semiconductors by metal organic vapour phase epitaxy (MOVPE). The limiting processes are discussed based on parametric studies of /spl delta/-doping. Growth parameters capable of effectively controlling the /spl delta/-doping concentration are revealed in the use of SiH/sub 4/, DMZn or TMAl as the doping precursor. The experimental results show that high quality /spl delta/-doped layers in III-Vs can be grown in MOVPE for device applications.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128527883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The quantum noise suppressed photon coupled transistor 量子噪声抑制光子耦合晶体管
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610081
K. Wang, P. Edwards, W. Cheung, T. Zhang, T. Nguyen
{"title":"The quantum noise suppressed photon coupled transistor","authors":"K. Wang, P. Edwards, W. Cheung, T. Zhang, T. Nguyen","doi":"10.1109/COMMAD.1996.610081","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610081","url":null,"abstract":"We outline the characteristics, potential applications and proposed OEIC fabrication of a quantum noise suppressed photon coupled transistor (QNS PCT), the first practical optoelectronic device to utilize amplitude squeezed (\"quiet\") light. A PCT comprises light-emitting and light-detecting junctions electrically and optically coupled together. It is similar to a bipolar transistor except that photons rather than minority carriers are transported from collector to emitter. The noise performance is studied. The device is modelled using LEDs and a PIN photodiode.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124679037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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