采用ECR扩散和ECR CVD方法低温制备低界面阱密度SiO/sub /薄膜

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610122

B. Jeon, Ilhyun Jung, I. Oh, T. Lim

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引用次数: 1

摘要

采用电子回旋共振(ECR)扩散法和ECR CVD法在低温条件下生长氧化硅薄膜。采用ECR扩散生长的氧化物浓度为250 /spl的MOS电容器，其界面阱密度为4.24/spl倍/10/sup 9/ cm/sup -2//spl中点/eV/sup -1/，比直接PECVD和远程PECVD低。该膜的界面氧化物电荷密度为6.88/spl倍/10/sup 11/ cm/sup -2/。在ECR CVD方法中，界面阱密度低于2.01/spl倍/10/sup 10/ cm/sup -2//spl middot/eV/sup -1/。

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Low temperature preparation of the SiO/sub 2/ films with low interface trap density using ECR diffusion and ECR CVD method

Silicon oxide films were grown by Electron Cyclotron Resonance (ECR) diffusion and the ECR CVD method at low temperature. An MOS capacitor with 250 /spl Aring/ of oxide grown by ECR diffusion had a lower interface trap density of 4.24/spl times/10/sup 9/ cm/sup -2//spl middot/eV/sup -1/ than direct PECVD and remote PECVD. The measured interface oxide charge density for this film was 6.88/spl times/10/sup 11/ cm/sup -2/. In the case of the ECR CVD method, interface trap density was lower than 2.01/spl times/10/sup 10/ cm/sup -2//spl middot/eV/sup -1/.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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