Recent progress in /spl delta/-doped compound semiconductors

Abstract

We report recent progress in growth of /spl delta/-doped compound semiconductors by metal organic vapour phase epitaxy (MOVPE). The limiting processes are discussed based on parametric studies of /spl delta/-doping. Growth parameters capable of effectively controlling the /spl delta/-doping concentration are revealed in the use of SiH/sub 4/, DMZn or TMAl as the doping precursor. The experimental results show that high quality /spl delta/-doped layers in III-Vs can be grown in MOVPE for device applications.