/spl δ /掺杂化合物半导体研究进展

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610088

G. Li, C. Jagadish

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引用次数: 0

摘要

本文报道了利用金属有机气相外延(MOVPE)生长/spl δ /掺杂化合物半导体的最新进展。基于/spl δ /掺杂的参数研究，讨论了极限过程。以SiH/sub - 4/、DMZn或TMAl为掺杂前驱体，揭示了能够有效控制/spl δ /-掺杂浓度的生长参数。实验结果表明，可以在MOVPE中生长出高质量的/spl δ /掺杂层，用于器件应用。

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Recent progress in /spl delta/-doped compound semiconductors

We report recent progress in growth of /spl delta/-doped compound semiconductors by metal organic vapour phase epitaxy (MOVPE). The limiting processes are discussed based on parametric studies of /spl delta/-doping. Growth parameters capable of effectively controlling the /spl delta/-doping concentration are revealed in the use of SiH/sub 4/, DMZn or TMAl as the doping precursor. The experimental results show that high quality /spl delta/-doped layers in III-Vs can be grown in MOVPE for device applications.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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