双频HgCdTe红外探测器结构原型的制作与建模

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610061

G. Parish, C. Musca, J.F. Siliquini, J. Antoszewski, J. Dell, B. Nener, L. Faraone, G. Gouws

{"title":"双频HgCdTe红外探测器结构原型的制作与建模","authors":"G. Parish, C. Musca, J.F. Siliquini, J. Antoszewski, J. Dell, B. Nener, L. Faraone, G. Gouws","doi":"10.1109/COMMAD.1996.610061","DOIUrl":null,"url":null,"abstract":"A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 /spl mu/m and 8-12 /spl mu/m, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The proposed structure employs a wider bandgap isolating layer between the two photosensitive layers such that an effective electrical barrier is formed thus prohibiting carrier transport between the two infrared absorbing layers. A comprehensive device model has been developed and the technology is demonstrated using a mature HgCdTe photoconductive device fabrication process. The fabricated detectors have an MWIR cutoff of 5.0 /spl mu/m, and LWIR cutoff of 10.5 /spl mu/m.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication and modelling of a prototype dual-band HgCdTe infrared detector structure\",\"authors\":\"G. Parish, C. Musca, J.F. Siliquini, J. Antoszewski, J. Dell, B. Nener, L. Faraone, G. Gouws\",\"doi\":\"10.1109/COMMAD.1996.610061\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 /spl mu/m and 8-12 /spl mu/m, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The proposed structure employs a wider bandgap isolating layer between the two photosensitive layers such that an effective electrical barrier is formed thus prohibiting carrier transport between the two infrared absorbing layers. A comprehensive device model has been developed and the technology is demonstrated using a mature HgCdTe photoconductive device fabrication process. The fabricated detectors have an MWIR cutoff of 5.0 /spl mu/m, and LWIR cutoff of 10.5 /spl mu/m.\",\"PeriodicalId\":171952,\"journal\":{\"name\":\"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1996.610061\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1996.610061","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了一种单片HgCdTe光导器件结构，适用于3-5 /spl mu/m和8-12 /spl mu/m两个大气透射窗口，分别对应中波和长波红外波段进行双频光配准红外光探测;分别为MWIR和LWIR。所提出的结构在两个光敏层之间采用更宽的带隙隔离层，使得形成有效的电屏障，从而禁止载流子在两个红外吸收层之间传输。开发了一个全面的器件模型，并使用成熟的HgCdTe光导器件制造工艺演示了该技术。所制备的探测器的中长波截止值为5.0 /spl μ m，低长波截止值为10.5 /spl μ m。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Fabrication and modelling of a prototype dual-band HgCdTe infrared detector structure

A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 /spl mu/m and 8-12 /spl mu/m, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The proposed structure employs a wider bandgap isolating layer between the two photosensitive layers such that an effective electrical barrier is formed thus prohibiting carrier transport between the two infrared absorbing layers. A comprehensive device model has been developed and the technology is demonstrated using a mature HgCdTe photoconductive device fabrication process. The fabricated detectors have an MWIR cutoff of 5.0 /spl mu/m, and LWIR cutoff of 10.5 /spl mu/m.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

自引率

0.00%

发文量