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Temperature dependent noise performance of Hg/sub 1-x/Cd/sub x/Te photoconductive detectors Hg/sub - 1-x/Cd/sub -x/ Te光导探测器的温度依赖性噪声性能
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610079
C. Musca, J.F. Siliquini, E. Smith, B. Nener, L. Faraone
{"title":"Temperature dependent noise performance of Hg/sub 1-x/Cd/sub x/Te photoconductive detectors","authors":"C. Musca, J.F. Siliquini, E. Smith, B. Nener, L. Faraone","doi":"10.1109/COMMAD.1996.610079","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610079","url":null,"abstract":"Background limited infrared photodetector (BLIP) performance, attained at cryogenic temperatures, is the maximum performance achievable by a photoconductive detector. By increasing the operating temperature, low cost detectors can be realised using thermoelectric cooling (>200 K). Investigation of temperature dependent performance of Hg/sub 1-x/Cd/sub x/Te infrared detectors is essential for developing device structures and fabrication technologies capable of producing BLIP performance. In this paper the performance of n-type x=0.31 Hg/sub 1-x/Cd/sub x/Te photoconductors under reduced cooling is examined experimentally and theoretically. Measurements gave a background limited D/sub /spl lambda//* of 1.9/spl times/10/sup 11/ cm Hz/sup 1/2/W/sup -1/ up to 170 K and D/sub /spl lambda//* values of 7.3/spl times/10/sup 10/ and 6.4/spl times/10/sup 9/ cm Hz/sup 1/2/W/sup -1/ were measured at 200 K and 300 K, respectively.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131053928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The characteristics of resistive gate MOS transistors 电阻栅MOS晶体管的特性
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610115
M. du Plessis, P. Schieke
{"title":"The characteristics of resistive gate MOS transistors","authors":"M. du Plessis, P. Schieke","doi":"10.1109/COMMAD.1996.610115","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610115","url":null,"abstract":"A lateral electric field can be set up in the gate of a resistive gate MOS transistor with more than one gate contact. A one-dimensional device model was developed for this structure and simulations indicated that under certain biasing conditions and with non-rectangular gate dimensions the saturation drain current is a linear function of the applied differential gate voltage. In the sub-threshold region of operation the drain current is a linear function of the differential gate voltage if the gate terminal nearest the source is biased near or just below the threshold voltage, but a square-law relationship is obtained when this gate is biased deeper into sub-threshold.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132885829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Spectroscopic investigation of single quantum well structures of semiconductors 半导体单量子阱结构的光谱研究
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610127
S. Shen
{"title":"Spectroscopic investigation of single quantum well structures of semiconductors","authors":"S. Shen","doi":"10.1109/COMMAD.1996.610127","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610127","url":null,"abstract":"A comprehensive and spectroscopic investigation, including absorption (AB), Photoluminescence (PL) and Photoreflectance (PR) experiments on the electronic states and their optical transitions in some single quantum well structures of semiconductors are performed and reported here in this paper. The oscillator intensities of 2D exciton transitions, the strain relaxation as a function of capping layer, the light hole states, the electron(exciton)-phonon interaction and other related physical processes in single quantum wells are addressed and discussed as compared with those in multiquantum well structures. The electronic states on the surface quantum well or quantum step are also investigated and reported.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115104861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-temperature chemical vapour deposited semiconducting nitrides 低温化学气相沉积半导体氮化物
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610147
T. Tansley
{"title":"Low-temperature chemical vapour deposited semiconducting nitrides","authors":"T. Tansley","doi":"10.1109/COMMAD.1996.610147","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610147","url":null,"abstract":"Recent work in the semiconducting nitrides AlN, GaN, InN and their ternary derivatives includes the low-temperature enhancement of MOCVD growth through a combination of ultraviolet laser photodissociation of metal precursors and microwave-plasma activated nitrogen radicals. These modifications allow the relative simplicity of low-pressure MOCVD to be successfully shifted to the 500-600/spl deg/C temperature range for GaN, and to room temperature for AlN. Advantages include the availability of short-period multilayers and abrupt heterostructures, free from the cross-diffusion of either ternary constituents or dopants. Thermally fragile substrates now also become available. The binaries grown by this method compare well with conventional MOCVD, room-temperature mobilities up to 400 cm/sup 2/ V/sup -1/ s/sup -1/ are obtained in GaN and as-grown carrier concentrations in the range 10/sup 15/-10/sup 17/ cm/sup -3/ can be controlled via the plasma density. CP/sub 2/Mg is used as counterdopant. Composition of AlGaN and InGaN is determined by precursor ratios, the relationship is linear in the former case but not in the latter. AlN with excellent dielectric properties has been deposited on unstable CdHgTe at 50C. We also mention the roles of microcrystallinity and polytypism in the physical properties of our materials as a function of substrate/buffer combination.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116209157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Point defects in ion implanted p-type silicon 离子注入p型硅中的点缺陷
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610095
S. Fatima, B. Svensson, C. Jagadish
{"title":"Point defects in ion implanted p-type silicon","authors":"S. Fatima, B. Svensson, C. Jagadish","doi":"10.1109/COMMAD.1996.610095","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610095","url":null,"abstract":"Electrically active point defects in Cz p-type Silicon (boron doped) created by low dose ion implantation of /sup 1/H, /sup 11/B, /sup 28/Si and /sup 74/Ge have been studied using deep level transient spectroscopy. Doses in the range 10/sup 7/ and 10/sup 10/ cm/sup -2/ and energies from 0.32 MeV to 7 MeV are used. Defects involving vacancies, interstitials and impurities are identified. In such a low dose regime, no defects related to the implanted species are observed. The formation of these defects is studied as a function of dose, sample depth and ion mass. In addition to substitutional carbon and interstitial oxygen as impurities in the as grown silicon, presence of one defect level related to metallic impurities is identified. Electron irradiation studies reveal that this level originates from a complex formed by a reaction between Cu and C/sub i/O/sub i/. The interaction between copper and implantation induced defects results in a copper decoration of the defect concentration versus depth profile.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128214896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ion beam induced intermixing of quantum well heterostructures for optoelectronic applications 光电子应用中离子束诱导量子阱异质结构的混合
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610086
R. Goldberg, P. Piva, I. V. Mitchell, P. Poole, S. Fafard, M. Dion, M. Buchanan, Y. Feng, S. Charbonneau
{"title":"Ion beam induced intermixing of quantum well heterostructures for optoelectronic applications","authors":"R. Goldberg, P. Piva, I. V. Mitchell, P. Poole, S. Fafard, M. Dion, M. Buchanan, Y. Feng, S. Charbonneau","doi":"10.1109/COMMAD.1996.610086","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610086","url":null,"abstract":"Ion beam intermixing is proving to be an attractive route to engineering the bandgap energies of quantum wells constructed from heterostructures in optoelectronic materials. Tests of the concept have been carried through to the device performance stage and full wafer processing. Two rather different examples of its capabilities: (a) differential wavelength adjustment on an array of GRINSCH-type laser diodes; and (b) cooling of laser facets through the use of bandgap adjusted cavity extensions, are presented. The need to better understand the physics underlying the technique is illustrated by results showing a pronounced dependence of bandgap shift upon implantation temperature.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"180 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133049704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High efficiency silicon solar cells 高效硅太阳能电池
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610042
M. Green
{"title":"High efficiency silicon solar cells","authors":"M. Green","doi":"10.1109/COMMAD.1996.610042","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610042","url":null,"abstract":"Of all renewable energy technology, photovoltaics has possibly the most to gain from the development and commercialization of new ideas presently only in the conceptual or laboratory stage. Photovoltaics presently has a well established image of a high quality, high cost technology able to deliver in even the most demanding applications. However, there are no physical reasons why photovoltaics cannot retain the high quality performance features while being produced at the cost of not much more than glass sheet. This paper describes the work within the author's Centre directed at further improving performance features while reducing cost towards these lower limits. Further improvements in cell energy conversion efficiency have been achieved over the last year, as has on-going success in the commercialization of the Centre's buried contact cell technology. The paper also describes progress in the commercialization of the Centre's thin film multilayer cell technology in conjunction with Pacific Power via a newly incorporated company, Pacific Solar Pty. Ltd.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126968798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 220
Preparation of In/sub 2/O/sub 3/ thin films by sol-gel process for ozone sensing 溶胶-凝胶法制备臭氧传感用In/sub 2/O/sub 3/薄膜
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610163
C. Jimenez, H.T. Sun, W. Wlodarski
{"title":"Preparation of In/sub 2/O/sub 3/ thin films by sol-gel process for ozone sensing","authors":"C. Jimenez, H.T. Sun, W. Wlodarski","doi":"10.1109/COMMAD.1996.610163","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610163","url":null,"abstract":"In/sub 2/O/sub 3/ thin films on sapphire substrates have been prepared from indium isopropoxide solutions by sol-gel process. Highly sensitive films have been obtained by using aged solutions and 500/spl deg/C annealing temperature. The electrical resistance increases greatly with increasing ozone concentration in the ppb range. The sol-gel-derived sensors have ozone sensitivity as large as 6 at 45 ppb, and working temperature below 200/spl deg/C.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122131788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
KOH wet etching techniques for the micromachining of (100) SOI wafers (100) SOI晶圆微加工的KOH湿法蚀刻技术
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610164
M. Rosa, S. Dimitrijev, H. B. Harrison
{"title":"KOH wet etching techniques for the micromachining of (100) SOI wafers","authors":"M. Rosa, S. Dimitrijev, H. B. Harrison","doi":"10.1109/COMMAD.1996.610164","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610164","url":null,"abstract":"This paper describes a method by which a KOH (Potassium Hydroxide) etchant is used for the micromachining of (100) SOI (Silicon-On-Insulator) wafers. Experiments carried out compare conventional wet and dry etching techniques (i.e., KOH and SF/sub 6//He Plasma Etching) and an original aligned pattern wet etching technique, which is the focus of this paper. Results obtained indicate that the aligned pattern technique allows the micromachining of silicon via wet etching to produce results of comparable quality to those of either of the chlorine based RIE or Plasma processes.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124752146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
The effect of broadening on the optical dielectric function of GaAs and AlAs 展宽对砷化镓和砷化镓光学介电功能的影响
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610134
A. Rakić, M. Majewski, M.I. Cohen
{"title":"The effect of broadening on the optical dielectric function of GaAs and AlAs","authors":"A. Rakić, M. Majewski, M.I. Cohen","doi":"10.1109/COMMAD.1996.610134","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610134","url":null,"abstract":"Optical dielectric function model of Ozaki and Adachi [J. Appl. Phys. 78, 3380 (1995)] is augmented by introducing Gaussian-like broadening function instead of Lorentzian broadening. In this way a consistent and comparatively simple analytic formula has been obtained, which accurately describes the optical dielectric function of GaAs and AlAs in a wide spectral range between 0.1 and 6 eV.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128914452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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