Spectroscopic investigation of single quantum well structures of semiconductors

Abstract

A comprehensive and spectroscopic investigation, including absorption (AB), Photoluminescence (PL) and Photoreflectance (PR) experiments on the electronic states and their optical transitions in some single quantum well structures of semiconductors are performed and reported here in this paper. The oscillator intensities of 2D exciton transitions, the strain relaxation as a function of capping layer, the light hole states, the electron(exciton)-phonon interaction and other related physical processes in single quantum wells are addressed and discussed as compared with those in multiquantum well structures. The electronic states on the surface quantum well or quantum step are also investigated and reported.