光电子应用中离子束诱导量子阱异质结构的混合

R. Goldberg, P. Piva, I. V. Mitchell, P. Poole, S. Fafard, M. Dion, M. Buchanan, Y. Feng, S. Charbonneau
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引用次数: 1

摘要

离子束混合被证明是一种有吸引力的途径来设计由光电材料的异质结构构建的量子阱的带隙能量。该概念的测试已经进行到器件性能阶段和全晶圆加工。它的能力有两个相当不同的例子:(a)在grinsch型激光二极管阵列上进行差分波长调整;(b)通过使用带隙调节腔扩展来冷却激光切面。我们需要更好地理解这种技术背后的物理原理,结果表明,带隙位移对注入温度有明显的依赖性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ion beam induced intermixing of quantum well heterostructures for optoelectronic applications
Ion beam intermixing is proving to be an attractive route to engineering the bandgap energies of quantum wells constructed from heterostructures in optoelectronic materials. Tests of the concept have been carried through to the device performance stage and full wafer processing. Two rather different examples of its capabilities: (a) differential wavelength adjustment on an array of GRINSCH-type laser diodes; and (b) cooling of laser facets through the use of bandgap adjusted cavity extensions, are presented. The need to better understand the physics underlying the technique is illustrated by results showing a pronounced dependence of bandgap shift upon implantation temperature.
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