R. Goldberg, P. Piva, I. V. Mitchell, P. Poole, S. Fafard, M. Dion, M. Buchanan, Y. Feng, S. Charbonneau
{"title":"光电子应用中离子束诱导量子阱异质结构的混合","authors":"R. Goldberg, P. Piva, I. V. Mitchell, P. Poole, S. Fafard, M. Dion, M. Buchanan, Y. Feng, S. Charbonneau","doi":"10.1109/COMMAD.1996.610086","DOIUrl":null,"url":null,"abstract":"Ion beam intermixing is proving to be an attractive route to engineering the bandgap energies of quantum wells constructed from heterostructures in optoelectronic materials. Tests of the concept have been carried through to the device performance stage and full wafer processing. Two rather different examples of its capabilities: (a) differential wavelength adjustment on an array of GRINSCH-type laser diodes; and (b) cooling of laser facets through the use of bandgap adjusted cavity extensions, are presented. The need to better understand the physics underlying the technique is illustrated by results showing a pronounced dependence of bandgap shift upon implantation temperature.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"180 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Ion beam induced intermixing of quantum well heterostructures for optoelectronic applications\",\"authors\":\"R. Goldberg, P. Piva, I. V. Mitchell, P. Poole, S. Fafard, M. Dion, M. Buchanan, Y. Feng, S. Charbonneau\",\"doi\":\"10.1109/COMMAD.1996.610086\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ion beam intermixing is proving to be an attractive route to engineering the bandgap energies of quantum wells constructed from heterostructures in optoelectronic materials. Tests of the concept have been carried through to the device performance stage and full wafer processing. Two rather different examples of its capabilities: (a) differential wavelength adjustment on an array of GRINSCH-type laser diodes; and (b) cooling of laser facets through the use of bandgap adjusted cavity extensions, are presented. The need to better understand the physics underlying the technique is illustrated by results showing a pronounced dependence of bandgap shift upon implantation temperature.\",\"PeriodicalId\":171952,\"journal\":{\"name\":\"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings\",\"volume\":\"180 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1996.610086\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1996.610086","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ion beam induced intermixing of quantum well heterostructures for optoelectronic applications
Ion beam intermixing is proving to be an attractive route to engineering the bandgap energies of quantum wells constructed from heterostructures in optoelectronic materials. Tests of the concept have been carried through to the device performance stage and full wafer processing. Two rather different examples of its capabilities: (a) differential wavelength adjustment on an array of GRINSCH-type laser diodes; and (b) cooling of laser facets through the use of bandgap adjusted cavity extensions, are presented. The need to better understand the physics underlying the technique is illustrated by results showing a pronounced dependence of bandgap shift upon implantation temperature.