低温化学气相沉积半导体氮化物

T. Tansley
{"title":"低温化学气相沉积半导体氮化物","authors":"T. Tansley","doi":"10.1109/COMMAD.1996.610147","DOIUrl":null,"url":null,"abstract":"Recent work in the semiconducting nitrides AlN, GaN, InN and their ternary derivatives includes the low-temperature enhancement of MOCVD growth through a combination of ultraviolet laser photodissociation of metal precursors and microwave-plasma activated nitrogen radicals. These modifications allow the relative simplicity of low-pressure MOCVD to be successfully shifted to the 500-600/spl deg/C temperature range for GaN, and to room temperature for AlN. Advantages include the availability of short-period multilayers and abrupt heterostructures, free from the cross-diffusion of either ternary constituents or dopants. Thermally fragile substrates now also become available. The binaries grown by this method compare well with conventional MOCVD, room-temperature mobilities up to 400 cm/sup 2/ V/sup -1/ s/sup -1/ are obtained in GaN and as-grown carrier concentrations in the range 10/sup 15/-10/sup 17/ cm/sup -3/ can be controlled via the plasma density. CP/sub 2/Mg is used as counterdopant. Composition of AlGaN and InGaN is determined by precursor ratios, the relationship is linear in the former case but not in the latter. AlN with excellent dielectric properties has been deposited on unstable CdHgTe at 50C. We also mention the roles of microcrystallinity and polytypism in the physical properties of our materials as a function of substrate/buffer combination.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"140 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low-temperature chemical vapour deposited semiconducting nitrides\",\"authors\":\"T. Tansley\",\"doi\":\"10.1109/COMMAD.1996.610147\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recent work in the semiconducting nitrides AlN, GaN, InN and their ternary derivatives includes the low-temperature enhancement of MOCVD growth through a combination of ultraviolet laser photodissociation of metal precursors and microwave-plasma activated nitrogen radicals. These modifications allow the relative simplicity of low-pressure MOCVD to be successfully shifted to the 500-600/spl deg/C temperature range for GaN, and to room temperature for AlN. Advantages include the availability of short-period multilayers and abrupt heterostructures, free from the cross-diffusion of either ternary constituents or dopants. Thermally fragile substrates now also become available. The binaries grown by this method compare well with conventional MOCVD, room-temperature mobilities up to 400 cm/sup 2/ V/sup -1/ s/sup -1/ are obtained in GaN and as-grown carrier concentrations in the range 10/sup 15/-10/sup 17/ cm/sup -3/ can be controlled via the plasma density. CP/sub 2/Mg is used as counterdopant. Composition of AlGaN and InGaN is determined by precursor ratios, the relationship is linear in the former case but not in the latter. AlN with excellent dielectric properties has been deposited on unstable CdHgTe at 50C. We also mention the roles of microcrystallinity and polytypism in the physical properties of our materials as a function of substrate/buffer combination.\",\"PeriodicalId\":171952,\"journal\":{\"name\":\"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings\",\"volume\":\"140 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1996.610147\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1996.610147","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

最近在半导体氮化物AlN, GaN, InN及其三元衍生物方面的工作包括通过紫外激光光解金属前体和微波等离子体激活氮自由基的组合来低温增强MOCVD生长。这些改进使得低压MOCVD相对简单,可以成功地将GaN的温度范围转移到500-600/spl℃,并将AlN的温度范围转移到室温。其优点包括可获得短周期多层和突发性异质结构,避免三元成分或掺杂剂的交叉扩散。热易碎的基材现在也可用。与传统的MOCVD相比,该方法生长的二元结构具有良好的性能,在GaN中获得了高达400 cm/sup 2/ V/sup -1/ s/sup -1/的室温迁移率,并且通过等离子体密度可以控制生长的载流子浓度在10/sup 15/-10/sup 17/ cm/sup -3/范围内。用CP/sub 2/Mg作为反掺杂剂。AlGaN和InGaN的组成由前驱物的比例决定,前者是线性关系,后者不是。在50℃下,在不稳定的CdHgTe表面沉积了具有优异介电性能的AlN。我们还提到了微结晶性和多型性在我们的材料的物理性质中的作用,作为衬底/缓冲液组合的函数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low-temperature chemical vapour deposited semiconducting nitrides
Recent work in the semiconducting nitrides AlN, GaN, InN and their ternary derivatives includes the low-temperature enhancement of MOCVD growth through a combination of ultraviolet laser photodissociation of metal precursors and microwave-plasma activated nitrogen radicals. These modifications allow the relative simplicity of low-pressure MOCVD to be successfully shifted to the 500-600/spl deg/C temperature range for GaN, and to room temperature for AlN. Advantages include the availability of short-period multilayers and abrupt heterostructures, free from the cross-diffusion of either ternary constituents or dopants. Thermally fragile substrates now also become available. The binaries grown by this method compare well with conventional MOCVD, room-temperature mobilities up to 400 cm/sup 2/ V/sup -1/ s/sup -1/ are obtained in GaN and as-grown carrier concentrations in the range 10/sup 15/-10/sup 17/ cm/sup -3/ can be controlled via the plasma density. CP/sub 2/Mg is used as counterdopant. Composition of AlGaN and InGaN is determined by precursor ratios, the relationship is linear in the former case but not in the latter. AlN with excellent dielectric properties has been deposited on unstable CdHgTe at 50C. We also mention the roles of microcrystallinity and polytypism in the physical properties of our materials as a function of substrate/buffer combination.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信