The characteristics of resistive gate MOS transistors

Abstract

A lateral electric field can be set up in the gate of a resistive gate MOS transistor with more than one gate contact. A one-dimensional device model was developed for this structure and simulations indicated that under certain biasing conditions and with non-rectangular gate dimensions the saturation drain current is a linear function of the applied differential gate voltage. In the sub-threshold region of operation the drain current is a linear function of the differential gate voltage if the gate terminal nearest the source is biased near or just below the threshold voltage, but a square-law relationship is obtained when this gate is biased deeper into sub-threshold.