电阻栅MOS晶体管的特性

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610115

M. du Plessis, P. Schieke

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引用次数: 1

摘要

在具有多个栅极触点的阻栅MOS晶体管的栅极中可以设置一个横向电场。建立了该结构的一维器件模型，仿真结果表明，在一定偏置条件下，栅极尺寸非矩形时，饱和漏极电流是外加差分栅极电压的线性函数。在工作的亚阈值区域，如果离源最近的栅极端子偏置接近或略低于阈值电压，则漏极电流是差分栅极电压的线性函数，但当栅极偏置深入亚阈值时，则得到平方律关系。

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The characteristics of resistive gate MOS transistors

A lateral electric field can be set up in the gate of a resistive gate MOS transistor with more than one gate contact. A one-dimensional device model was developed for this structure and simulations indicated that under certain biasing conditions and with non-rectangular gate dimensions the saturation drain current is a linear function of the applied differential gate voltage. In the sub-threshold region of operation the drain current is a linear function of the differential gate voltage if the gate terminal nearest the source is biased near or just below the threshold voltage, but a square-law relationship is obtained when this gate is biased deeper into sub-threshold.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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