离子注入p型硅亚阈值损伤的电学特性

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610096

S. Fatima, C. Jagadish

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引用次数: 0

摘要

利用电容电压(CV)测量和深能级瞬态光谱(DLTS)技术研究了注入和退火p型硅(掺硼)中的残余电活性缺陷。p型Si注入5.5 MeV Si离子，剂量在10/sup 12/和10/sup 14/ cm/sup -2/之间。这些样品在高温(900/spl℃)下退火。与n型Si相比，建立了一个临界剂量，表明在点缺陷到扩展缺陷之间的转变，其中在相同的物种和相同的退火条件下建立了临界剂量，在此条件下没有电活性缺陷。

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Electrical characterization of the subthreshold damage in ion implanted p-type silicon

The residual electrically active defects in implanted and annealed p-type Si (boron doped) have been studied with capacitance-voltage (CV) measurements and deep level transient spectroscopy (DLTS). P-type Si is implanted with 5.5 MeV Si ions to doses between 10/sup 12/ and 10/sup 14/ cm/sup -2/. These samples were annealed at elevated temperatures (900/spl deg/C). A critical dose is established indicating the transformation between point defects in to extended defects in contrast to n-type Si where a critical dose has been established for same species and under same annealing conditions below which no electrically active defects are seen.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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