Saturation of effective channel length increase due to hot carrier degradation in submicron LDD nMOSFETs

Abstract

The effective channel length of submicron LDD nMOSFETs after hot carrier degradation was measured. After the hot carrier stressing, the effective channel lengths were increased with time but saturated after a certain threshold time of about 1000 s. The saturation nature of hot carrier degradation in LDD nMOSFETs can be understood through the saturation of the effective channel length.