点缺陷非平衡情况下InGaAs外延层中Be扩散的模拟

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610089

S. Gautier, S. Koumetz, J. Marcon, K. Ketata, M. Ketata, P. Launay

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引用次数: 0

摘要

研究了生长后退火过程中铍在InGaAs外延层中的扩散。在点缺陷非平衡条件下，研究了考虑中性Be间质和带电点缺陷的踢出扩散模型。在此基础上，提出了一种基于解离和踢出机制同时扩散的通用替代-间隙扩散模型。仿真曲线与实验曲线比较，结果吻合较好。

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Simulation of Be diffusion in InGaAs epitaxial layers in the case of point defect nonequilibrium

Beryllium diffusion during post-growth annealing has been investigated in InGaAs epitaxial layers. Under point defect nonequilibrium conditions, a Kick-out Diffusion model considering neutral Be interstitial species and charged point defects has been studied. Then, a General Substitutional-Interstitial Diffusion model based on simultaneous diffusion by Dissociative and Kick-out mechanisms is proposed. Simulated curves are compared with experimental profiles and good agreement is obtained.

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来源期刊

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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