Simulation of Be diffusion in InGaAs epitaxial layers in the case of point defect nonequilibrium

Abstract

Beryllium diffusion during post-growth annealing has been investigated in InGaAs epitaxial layers. Under point defect nonequilibrium conditions, a Kick-out Diffusion model considering neutral Be interstitial species and charged point defects has been studied. Then, a General Substitutional-Interstitial Diffusion model based on simultaneous diffusion by Dissociative and Kick-out mechanisms is proposed. Simulated curves are compared with experimental profiles and good agreement is obtained.