Electrical characterization of the subthreshold damage in ion implanted p-type silicon

Abstract

The residual electrically active defects in implanted and annealed p-type Si (boron doped) have been studied with capacitance-voltage (CV) measurements and deep level transient spectroscopy (DLTS). P-type Si is implanted with 5.5 MeV Si ions to doses between 10/sup 12/ and 10/sup 14/ cm/sup -2/. These samples were annealed at elevated temperatures (900/spl deg/C). A critical dose is established indicating the transformation between point defects in to extended defects in contrast to n-type Si where a critical dose has been established for same species and under same annealing conditions below which no electrically active defects are seen.