Si-SiGe量子阱中真实连续空穴态

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610138

V. I. Galiev, E. Goldys, A. Kruglov, A. F. Polupanov, T. Tansley

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引用次数: 1

摘要

本文提出了一种有效的数值解析方法，用于求解由耦合薛定谔方程描述的具有任意势分布的量子阱系统的连续态，例如半导体量子阱中的空穴态。采用该方法对应变层Si/Si/sub - 1-x/Ge/sub -x/量子阱异质结构中空穴的散射进行了研究。

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Realistic continuum hole states in Si-SiGe quantum wells

An efficient numerical-analytical method is presented for finding continuum states in quantum-well systems with arbitrary potential profiles, described by coupled Schrodinger equations, such as hole states in semiconductor quantum wells. The method developed is used to examine the scattering of holes in strained layer Si/Si/sub 1-x/Ge/sub x/ quantum-well heterostructures.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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