Luminescence at 1539 nm from erbium and oxygen implanted GaN

Abstract

Strong room temperature Er-related photoluminescence (PL) and electroluminescence (EL) at 1539 nm was observed from Er and O implanted GaN. For device fabrication it is important that the Er-related absorption and emission processes be efficient. Single exponential PL or EL time decays with 1/e lifetimes of 2.33 ms or 1.74 ms indicate a highly efficient radiative process. The absorption process is studied comparing the efficiency of below-bandgap excitation, above-bandgap excitation, and electrical (impact) excitation.