铒氧注入GaN在1539nm处的发光

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610150

J. Torvik, C. Qiu, R. Feuerstein, J. Pankove, F. Namavar

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引用次数: 0

摘要

Er和O注入的GaN在1539 nm处观察到强烈的室温Er相关光致发光(PL)和电致发光(EL)。对于器件制造，重要的是与er相关的吸收和发射过程是有效的。单指数PL或EL时间衰减的1/e寿命分别为2.33 ms或1.74 ms，表明这是一个高效的辐射过程。比较了带隙下激励、带隙上激励和电(冲击)激励的吸收效率。

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Luminescence at 1539 nm from erbium and oxygen implanted GaN

Strong room temperature Er-related photoluminescence (PL) and electroluminescence (EL) at 1539 nm was observed from Er and O implanted GaN. For device fabrication it is important that the Er-related absorption and emission processes be efficient. Single exponential PL or EL time decays with 1/e lifetimes of 2.33 ms or 1.74 ms indicate a highly efficient radiative process. The absorption process is studied comparing the efficiency of below-bandgap excitation, above-bandgap excitation, and electrical (impact) excitation.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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