从Al/LT GaAs/n/sup +/GaAs肖特基二极管的性质推断退火低温生长GaAs中的隙态输运

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610141

P. Arifin, T. Tansley, E. Goldys

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引用次数: 0

摘要

我们通过Al/低温(LT)生长的GaAs/n/sup +/GaAs肖特基二极管的I-V特性作为温度的函数和室温下的交流电导率来探测其输运机制。该结构具有整流和串联电阻的特点。前者根据热离子发射隧穿理论进行了分析，结果表明，温度相关的理想因子接近于3，具有通过n/sup +/衬底损耗势垒隧穿的特性。电子通过该势垒注入到LT GaAs层的隙态中。串联电阻随温度的变化表现为Arrhenius型行为，活化能为32 meV，而频率相关的交流电导率表现为/spl ω //sup s/， s=0.65。这些观察结果与跃过间隙态是一致的。

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Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n/sup +/GaAs Schottky diodes

We have probed transport mechanisms in Al/low temperature (LT) grown GaAs/n/sup +/GaAs Schottky diodes through their I-V characteristics as a function of temperature and through their AC conductivity at room temperature. The structures show features of rectification and series resistance. The former is analysed in terms of thermionic emission-tunneling theory and shows the temperature dependent ideality factor close to three, characteristic of tunneling through the depletion barrier of the n/sup +/ substrate. Electrons are injected through this barrier into gap states in the LT GaAs layer. The series resistance versus temperature shows an Arrhenius type behaviour with an activation energy of 32 meV, while the frequency-dependent AC conductivity behaves as /spl omega//sup s/ with s=0.65. These observations are consistent with hopping through gap states.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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