暗模光谱法测定离子注入二氧化硅波导的基本参数

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610174

J. Gazecki, M. Zamora, G. K. Reeves, P. Leech, J. M. Kubica

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引用次数: 0

摘要

利用暗模光谱技术和模式曲线测定了二氧化硅波导的折射率和厚度。利用波长为632.8 nm和833 nm的TE极化激光束，研究了阶跃折射率波导和离子注入波导中的导模和漏模。

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Determination of basic parameters of ion implanted silica waveguides by dark mode spectroscopy method

The dark mode spectroscopy technique and mode curves were used to determine the refractive indices and thicknesses of silica waveguides. The guided and leaky modes were studied in step-index and ion implanted waveguides using a TE polarised laser beam of 632.8 nm and 833 nm wavelengths.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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