{"title":"用于激光雷达系统的InP/InGaAs探测器的研制","authors":"T. Yeow, B. Craig","doi":"10.1109/COMMAD.1996.610067","DOIUrl":null,"url":null,"abstract":"Describes efforts at DSTO to examine the application of InP/InGaAs array technology to laser radar sensors. The advantages of InP/InGaAs photodiode technology are its high sensitivity to the \"eye-safe\" laser wavelength, its high frequency operation and the maturity of the basic technology. A hybrid approach is taken in this study to fully optimise the photodetector and read-out modules in order to develop a real-time imaging laser radar system.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Developing InP/InGaAs detectors for laser radar systems\",\"authors\":\"T. Yeow, B. Craig\",\"doi\":\"10.1109/COMMAD.1996.610067\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Describes efforts at DSTO to examine the application of InP/InGaAs array technology to laser radar sensors. The advantages of InP/InGaAs photodiode technology are its high sensitivity to the \\\"eye-safe\\\" laser wavelength, its high frequency operation and the maturity of the basic technology. A hybrid approach is taken in this study to fully optimise the photodetector and read-out modules in order to develop a real-time imaging laser radar system.\",\"PeriodicalId\":171952,\"journal\":{\"name\":\"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1996.610067\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1996.610067","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Developing InP/InGaAs detectors for laser radar systems
Describes efforts at DSTO to examine the application of InP/InGaAs array technology to laser radar sensors. The advantages of InP/InGaAs photodiode technology are its high sensitivity to the "eye-safe" laser wavelength, its high frequency operation and the maturity of the basic technology. A hybrid approach is taken in this study to fully optimise the photodetector and read-out modules in order to develop a real-time imaging laser radar system.