Realisation of very short wet etched mirror lasers in GRINSCH-QW GaAs-based structure

Abstract

Very short wet chemically etched mirror lasers reveal that devices show laser operation down till 29 /spl mu/m of cavity length at a threshold current of 70 mA, exhibiting an output power of 0.5 mW. These devices lase simultaneously at two or three different wavelengths namely around 855, 830 and 805 nm. The number of peaks is related to the current.