M. Ridgway, A. P. Byrne, E. Bezakova, M. Wehner, R. Vianden
{"title":"Characterisation of residual disorder in Sn-implanted InP with perturbed angular correlation","authors":"M. Ridgway, A. P. Byrne, E. Bezakova, M. Wehner, R. Vianden","doi":"10.1109/COMMAD.1996.610093","DOIUrl":null,"url":null,"abstract":"InP substrates were implanted with /sup 120/Sn, /sup 115/In and/or /sup 31/P ions and thereafter, with trace amounts of radioactive /sup 111/In ions. Following rapid thermal annealling, the fraction of undisturbed /sup 111/In sites was measured with perturbed angular correlation (PAC). Though Sn and In ions have comparable masses, undisturbed fractions of 42 and 67%, respectively, were experimentally determined as attributed to the charge on the ionised donor and differences in bond length. Precipitated Sn atoms were shown to have a negligible influence on the undisturbed fraction. Comparing In-, P- and In-and-P-implanted samples, excess P yielded a greater fraction of undisturbed sites relative to excess In (87 and 67%, respectively) as attributed to the lesser mass of P and hence, the lesser energy deposited in vacancy production. However, In-and-P-implanted samples yielded an intermediate value (81%), demonstrating the influence of non-stoichiometry. Also, complementary double-crystal X-ray diffraction measurements were in qualitative agreement with the results derived from PAC with the latter shown to be an effective analytical technique for the measurement of disorder in ion-implanted InP.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"160 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1996.610093","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
InP substrates were implanted with /sup 120/Sn, /sup 115/In and/or /sup 31/P ions and thereafter, with trace amounts of radioactive /sup 111/In ions. Following rapid thermal annealling, the fraction of undisturbed /sup 111/In sites was measured with perturbed angular correlation (PAC). Though Sn and In ions have comparable masses, undisturbed fractions of 42 and 67%, respectively, were experimentally determined as attributed to the charge on the ionised donor and differences in bond length. Precipitated Sn atoms were shown to have a negligible influence on the undisturbed fraction. Comparing In-, P- and In-and-P-implanted samples, excess P yielded a greater fraction of undisturbed sites relative to excess In (87 and 67%, respectively) as attributed to the lesser mass of P and hence, the lesser energy deposited in vacancy production. However, In-and-P-implanted samples yielded an intermediate value (81%), demonstrating the influence of non-stoichiometry. Also, complementary double-crystal X-ray diffraction measurements were in qualitative agreement with the results derived from PAC with the latter shown to be an effective analytical technique for the measurement of disorder in ion-implanted InP.