Characterisation of residual disorder in Sn-implanted InP with perturbed angular correlation

M. Ridgway, A. P. Byrne, E. Bezakova, M. Wehner, R. Vianden
{"title":"Characterisation of residual disorder in Sn-implanted InP with perturbed angular correlation","authors":"M. Ridgway, A. P. Byrne, E. Bezakova, M. Wehner, R. Vianden","doi":"10.1109/COMMAD.1996.610093","DOIUrl":null,"url":null,"abstract":"InP substrates were implanted with /sup 120/Sn, /sup 115/In and/or /sup 31/P ions and thereafter, with trace amounts of radioactive /sup 111/In ions. Following rapid thermal annealling, the fraction of undisturbed /sup 111/In sites was measured with perturbed angular correlation (PAC). Though Sn and In ions have comparable masses, undisturbed fractions of 42 and 67%, respectively, were experimentally determined as attributed to the charge on the ionised donor and differences in bond length. Precipitated Sn atoms were shown to have a negligible influence on the undisturbed fraction. Comparing In-, P- and In-and-P-implanted samples, excess P yielded a greater fraction of undisturbed sites relative to excess In (87 and 67%, respectively) as attributed to the lesser mass of P and hence, the lesser energy deposited in vacancy production. However, In-and-P-implanted samples yielded an intermediate value (81%), demonstrating the influence of non-stoichiometry. Also, complementary double-crystal X-ray diffraction measurements were in qualitative agreement with the results derived from PAC with the latter shown to be an effective analytical technique for the measurement of disorder in ion-implanted InP.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"160 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1996.610093","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

InP substrates were implanted with /sup 120/Sn, /sup 115/In and/or /sup 31/P ions and thereafter, with trace amounts of radioactive /sup 111/In ions. Following rapid thermal annealling, the fraction of undisturbed /sup 111/In sites was measured with perturbed angular correlation (PAC). Though Sn and In ions have comparable masses, undisturbed fractions of 42 and 67%, respectively, were experimentally determined as attributed to the charge on the ionised donor and differences in bond length. Precipitated Sn atoms were shown to have a negligible influence on the undisturbed fraction. Comparing In-, P- and In-and-P-implanted samples, excess P yielded a greater fraction of undisturbed sites relative to excess In (87 and 67%, respectively) as attributed to the lesser mass of P and hence, the lesser energy deposited in vacancy production. However, In-and-P-implanted samples yielded an intermediate value (81%), demonstrating the influence of non-stoichiometry. Also, complementary double-crystal X-ray diffraction measurements were in qualitative agreement with the results derived from PAC with the latter shown to be an effective analytical technique for the measurement of disorder in ion-implanted InP.
用摄动角相关表征锡注入InP的残留紊乱
在InP基质中注入/sup 120/Sn、/sup 115/In和/或/sup 31/P离子,然后注入微量的放射性/sup 111/In离子。在快速热退火后,用摄动角相关(PAC)测量了未扰动/sup 111/In位点的比例。虽然Sn和In离子具有相当的质量,但未受干扰的比例分别为42%和67%,实验确定这是由于电离供体上的电荷和键长差异造成的。析出的锡原子对未扰动部分的影响可以忽略不计。相对于过量的In, P和In-and-P注入的样品,过量的P产生了更大比例的未干扰位点(分别为87%和67%),这是由于P的质量较小,因此在空位产生中沉积的能量较小。然而,注入in和p的样品产生了中间值(81%),表明非化学计量的影响。此外,互补双晶x射线衍射测量结果与PAC的结果在定性上一致,后者被证明是测量离子注入InP中无序性的有效分析技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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