金属在硅纳米空腔中的吸附

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610169

A. Kinomura, J. Wong-Leung, M. Petravić, J.S. Williams

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引用次数: 1

摘要

通过高剂量氢注入和随后在硅中退火产生的纳米空腔为一系列金属杂质的捕集提供了有利的位置。在这项工作中，说明了高浓度的Au和Cu在空腔中的捕集。此外，研究表明，低浓度的铜(远低于硅的固溶极限)也可以非常有效地吸附到纳米空腔中。

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Gettering of metals to nanocavities in silicon

Nanocavities, produced by high dose hydrogen implantation and subsequent annealing in silicon, have been found to provide favourable sites for the gettering of a range of metallic impurities. In this work, the gettering of high concentrations of Au and Cu to cavities is illustrated. In addition, it is shown that low concentrations of Cu (well below the solid solubility limit in silicon) can also be very efficiently gettered to nanocavities.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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