III-V型半导体量子阱中的光调制光致发光

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610130

T. Baars, A. Chtanov, M. Gal

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引用次数: 0

摘要

我们开发了一种新的调制光致发光(PL)光谱技术。我们发现在两倍于激发光调制频率下检测到的信号包含了类似于光调制PL实验的非线性过程的信息。我们将这种非线性PL信号归因于量子阱(QW)样品内部电场的光学调制。该方法允许分离重叠的PL发射线，并提供分离线的发射参数，即使PL光谱本身看起来没有特征。

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Photo-modulated photoluminescence in III-V semiconductor quantum wells

We have developed a new technique of modulated photoluminescence (PL) spectroscopy. We show that the signal detected at twice the modulation frequency of the exciting light contains information about the non-linear processes similar to photo-modulated PL experiments. We attribute this non-linear PL signal to the optical modulation of the internal electric field of the quantum well (QW) samples. The method allows the separation of overlapping PL emission lines and provides the emission parameters of the separated lines, even when the PL spectrum itself appears to be featureless.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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