高纯探测器级硅的辐射硬度研究

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610170

M. Reinhard, A. Rosenfeld, D. Alexiev, V.I. Khivrich, M. Varentsov, P. Litovchenko, A. I. Anokhin, O.S. Zinets

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引用次数: 0

摘要

研究了在不同制备工艺条件下生长的高纯硅材料在中子辐照和γ辐照下的损伤。利用霍尔效应测量，观察了载流子类型和浓度作为γ和快中子剂量的函数。利用光学深能级瞬态电导光谱(ODLTCS)对中子辐照离子注入硅探测器的辐射诱导缺陷进行了观察。利用该方法，观察了存在于高纯硅本体内的残留杂质的作用作为时间的函数，以确定室温退火的作用。

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Radiation hardness study of high purity detector grade silicon

The damage associated with neutron irradiated and gamma irradiated high purity silicon was investigated for material grown on the basis of different manufacturing technologies. Using Hall effect measurements, observation was made of the carrier type and concentration as a function of gamma and fast neutron dose. Observation of the radiation induced defects was made on neutron irradiated ion implanted silicon detectors using Optical Deep Level Transient Conductance Spectroscopy (ODLTCS). Using this method, the role of residual impurities present within the high purity silicon bulk was observed as a function of time to determine the role of room temperature annealing.

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来源期刊

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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