Analysis and characterisation of erbium implanted, titanium diffused lithium niobate optical waveguides

Abstract

The aim of this study was to investigate erbium doping of LiNbO/sub 3/ using high energy ion implantation. Several Er implanted devices were fabricated and measured at 1300 and 1530 nm. The Er implantation profile was also measured using SIMS and photoluminescence measurements indicated an upper fluorescence lifetime of 2.75 ms.