Photoluminescence studies of anodic-oxide-induced intermixing of GaAs/AlGaAs quantum well heterostructures

Abstract

A novel impurity-free interdiffusion technique, anodic-oxide-induced intermixing is demonstrated. A pulsed anodization of GaAs/AlGaAs quantum well heterostructures (QWH) with subsequent rapid thermal annealing (RTA) at 900/spl deg/C, is studied. Blue shifts of up to 72meV have been observed by photoluminescence (PL) in intermixed samples with no significant broadening of the linewidth and good retention of PL intensity. The blueshift in the PL spectra is shown to increase with no sign of saturation with RTA times up to 120 seconds.