Electrical properties of nitrided SiO/sub 2/ on 6H-SiC by RTP

Abstract

This paper presents the results of the effect of NO and N/sub 2/O annealing on the electrical characteristics of SiO/sub 2/ grown on the Si-faced n- and p-type 6H SiC by rapid thermal processing (RTP). For n-type 6H-SiC, the as-grown SiO/sub 2/ in pure O/sub 2/ gives near ideal C-V curves. NO annealing has little effect on the C-V curves while N/sub 2/O annealing makes the C-V curves shift to the positive voltage. For p-type 6H-SiC, NO annealing improves the C-V curves greatly. But N/sub 2/O annealing shifts the C-V curves to the negative voltage. Conductance measurements show that NO annealing decreases the interface state density for both n- and p-type 6H-SiC. N/sub 2/O annealing increases the interface state density for n-type 6H-SiC.