异质结场效应晶体管在接近异质界面处最大电子位移的性能提高

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610110

W. Lour, Hung-Ren Chen, Ling-Tse Hung, W. Chang

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引用次数: 0

摘要

本文报道了用MBE法制备与AlGaAs/InGaAs相关的异质结场效应晶体管及其特性。用两种方法将最大电子从靠近栅极-沟道异质界面处移出。两者都会导致类似等级的通道。由于InGaAs阱中优越的电子传输特性，所研究的器件与传统的AlGaAs/GaAs和AlGaAs/InGaAs金属-绝缘体-半导体场效应管相比具有更好的特性。可获得高击穿电压、大导通电压、低输出电导和改进的器件线性度。

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Performance enhancement of heterojunction field-effect transistors by shifting maximum of electrons from close to heterointerface

We report on the fabrication and characteristics of AlGaAs/InGaAs related heterojunction field-effect transistors by MBE. Two methods were used to shift the maximum of electrons from close to the gate-channel heterointerface. Both result in grade-like channels. Due to the superior electron transport properties in InGaAs wells, the studied devices exhibit better characteristics compared with conventional AlGaAs/GaAs and AlGaAs/InGaAs metal-insulator-semiconductor FETs. High breakdown voltages, large turn on voltages, low output conductance, and improved device linearity are obtainable.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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