高效高速Ga/sub -x/Al/sub -x/ As发光二极管特性

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610075

Tingqing Zhang, T. Sugeta, M. Takemura, P. Edwards, W. Cheung, P. Lynam

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引用次数: 0

摘要

研究了单步液相外延法制备的高效高速发光二极管的电学和光学特性。测量了外量子效率和调制带宽分别作为驱动电流、有源区空穴浓度和环境温度的函数。在室温和50 mA驱动电流(60 A/cm/sup 2/电流密度)条件下，测量输出功率为23 mW，外量子效率为30%，调制带宽为50 MHz。功率带宽积在Ga/sub - 1-x/Al/sub -x/ As发光二极管中是最高的。

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High-efficiency high-speed Ga/sub 1-x/Al/sub x/As light-emitting diode characteristics

We have studied the electrical and optical properties of high-efficiency high-speed light-emitting diodes, fabricated by single-step liquid phase epitaxy. The external quantum efficiency and the modulation bandwidth are measured as functions of drive current, hole concentration in the active region, and ambient temperature, respectively. Output power of 23 mW, external quantum efficiency of 30% and modulation bandwidth of 50 MHz were measured at room temperature and 50 mA drive current (60 A/cm/sup 2/ current density). The power-bandwidth product is the highest among those reported for Ga/sub 1-x/Al/sub x/As light-emitting diodes.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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