High-efficiency high-speed Ga/sub 1-x/Al/sub x/As light-emitting diode characteristics

Abstract

We have studied the electrical and optical properties of high-efficiency high-speed light-emitting diodes, fabricated by single-step liquid phase epitaxy. The external quantum efficiency and the modulation bandwidth are measured as functions of drive current, hole concentration in the active region, and ambient temperature, respectively. Output power of 23 mW, external quantum efficiency of 30% and modulation bandwidth of 50 MHz were measured at room temperature and 50 mA drive current (60 A/cm/sup 2/ current density). The power-bandwidth product is the highest among those reported for Ga/sub 1-x/Al/sub x/As light-emitting diodes.