Ion-implanted waveguide formation in silica

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610158

C. Johnson, M. Ridgway, P. Leech

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引用次数: 1

Abstract

The optimum processing parameters for the fabrication of low-loss waveguides in fused silica by ion implantation and annealing have been determined through a comparison of implantation-induced physical and optical properties. The step height at an implanted/unimplanted boundary resulting from Si implantation was measured as a function of ion dose (2/spl times/10/sup 12/-6/spl times/10/sup 16//cm/sup 2/), post-implantation annealing temperature (200-900/spl deg/C) and time (0-2.5 hr). For a given ion energy (5 MeV), the compaction increased for doses

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二氧化硅中离子注入波导的形成

通过比较离子注入和退火制备低损耗石英波导的物理和光学性能，确定了离子注入和退火制备低损耗石英波导的最佳工艺参数。Si注入引起的注入/未注入边界处的台阶高度是离子剂量(2/spl倍/10/sup 12/-6/spl倍/10/sup 16//cm/sup 2/)、注入后退火温度(200-900/spl℃)和时间(0-2.5 hr)的函数。对于给定离子能量(5 MeV)，当剂量

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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