InGaAs/AlAs/InP谐振隧穿二极管的设计、制造与建模

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610123

C. Leung, D. Skellern

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引用次数: 2

摘要

我们在InP衬底上设计并制造了In/sub 0.53/Ga/sub 0.47/As/AlAs谐振隧穿二极管。在室温下，器件的直流I-V特性曲线分别在0.13 V和0.65 V处呈现两个负差分电阻区。第二个谐振峰的电流密度为3.0/spl倍/10/sup 4/ a /cm/sup 2/，峰谷比为2:1。实测的隧穿电流和峰值谐振电压与相干隧穿模型的理论计算结果吻合较好。用电子的谷间散射来模拟过量电流，所得的I-V曲线与实验结果吻合得很好。

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Design, fabrication and modelling of InGaAs/AlAs/InP resonant tunnelling diode

We have designed and fabricated In/sub 0.53/Ga/sub 0.47/As/AlAs resonant tunnelling diodes on an InP substrate. At room temperature, the devices exhibit two negative differential resistance regions at 0.13 V and 0.65 V, respectively, in their dc I-V characteristic curves. The second resonant peak has a current density of 3.0/spl times/10/sup 4/ A/cm/sup 2/ and a peak-to-valley-ratio of 2:1. The measured tunnelling current and peak resonant voltages agree well with the theoretical calculations from a coherent tunnelling model. When the excess current is simulated by intervalley scattering of electrons, the resultant I-V curve matches very well with the experimental results.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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