GaAs衬底生长ZnSe层的应变应变和界面结构

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610154

Y. Zhang, B. Usher, J. Riley, X. Huang, J. Zou, R. Leckey, D. Wolfframm

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引用次数: 0

摘要

大多数II-VI器件结构生长在砷化镓衬底上。在脱毛层和衬底之间存在的晶格不匹配导致了脱毛层中的应变。通过将x射线测量的变形和取向错误与ZnSe/GaAs界面缺陷结构联系起来，我们能够提出ZnSe/GaAs系统中应变松弛过程的模型。

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Strain relief and interfacial structure in ZnSe layers grown on GaAs substrates

Most II-VI device structures are grown on GaAs substrates. The lattice mismatch which exists between the epilayer and substrate consequently induces a strain in the epilayer. By relating X-ray measurements of distortion and misorientation of the epilayer unit cell to the defect structure at the ZnSe/GaAs interface, we are able to propose a model for the strain relaxation process in the ZnSe/GaAs system.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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