{"title":"Study of piezoelectric effect in GaN thin films using a modified Michelson interferometer","authors":"S. Muensit, D. Wilson, I. Guy","doi":"10.1109/COMMAD.1996.610137","DOIUrl":null,"url":null,"abstract":"A single-beam interferometer has been set up to study the piezoelectric response of III-V semiconductors. Small displacements, induced by a driving voltage at a fixed frequency, can be detected and give a direct measurement of the piezoelectric coefficient. The system calibration is checked using a quartz specimen, and the measured d/sub 11/ value is 2.34 pm/V. Measurements on GaN films grown by chemical vapour deposition are also reported. Errors arising from non-uniform film deposition and from substrate bending are discussed.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1996.610137","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A single-beam interferometer has been set up to study the piezoelectric response of III-V semiconductors. Small displacements, induced by a driving voltage at a fixed frequency, can be detected and give a direct measurement of the piezoelectric coefficient. The system calibration is checked using a quartz specimen, and the measured d/sub 11/ value is 2.34 pm/V. Measurements on GaN films grown by chemical vapour deposition are also reported. Errors arising from non-uniform film deposition and from substrate bending are discussed.