Study of piezoelectric effect in GaN thin films using a modified Michelson interferometer

S. Muensit, D. Wilson, I. Guy
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引用次数: 3

Abstract

A single-beam interferometer has been set up to study the piezoelectric response of III-V semiconductors. Small displacements, induced by a driving voltage at a fixed frequency, can be detected and give a direct measurement of the piezoelectric coefficient. The system calibration is checked using a quartz specimen, and the measured d/sub 11/ value is 2.34 pm/V. Measurements on GaN films grown by chemical vapour deposition are also reported. Errors arising from non-uniform film deposition and from substrate bending are discussed.
用改进的迈克尔逊干涉仪研究GaN薄膜中的压电效应
建立了单光束干涉仪,用于研究III-V型半导体的压电响应。由固定频率的驱动电压引起的小位移可以被检测到,并给出压电系数的直接测量。使用石英试样对系统进行校准,测得的d/sub /值为2.34 pm/V。对化学气相沉积法生长的氮化镓薄膜的测量也作了报道。讨论了由薄膜沉积不均匀和基底弯曲引起的误差。
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