Ion implantation for wavelength-shifting and quantum wire lasers

Abstract

Ion implantation is used to induce intermixing in quantum well structures and hence modify the shape and the excitonic levels of the wells. Broad-area GaAs quantum well lasers lasing at different wavelengths have been fabricated using this technique. Up to 5 nm shift in the wavelength is observed corresponding to an implantation dose of 1/spl times/10/sup 15/ H/cm/sup 2/ without any degradation in the current threshold characteristics. A self-aligned dual implantation method is proposed to create current confining regions and selectively disorder the side walls in quantum wire laser structures grown on non-planar substrates.