{"title":"二氧化硅中离子注入波导的形成","authors":"C. Johnson, M. Ridgway, P. Leech","doi":"10.1109/COMMAD.1996.610158","DOIUrl":null,"url":null,"abstract":"The optimum processing parameters for the fabrication of low-loss waveguides in fused silica by ion implantation and annealing have been determined through a comparison of implantation-induced physical and optical properties. The step height at an implanted/unimplanted boundary resulting from Si implantation was measured as a function of ion dose (2/spl times/10/sup 12/-6/spl times/10/sup 16//cm/sup 2/), post-implantation annealing temperature (200-900/spl deg/C) and time (0-2.5 hr). For a given ion energy (5 MeV), the compaction increased for doses </spl sim/10/sup 15//cm/sup 2/ and thereafter, saturated. Isochronal and isothermal annealing both resulted in a non-linear reduction in compaction, typical of a thermally-induced process. In contrast to the continual reduction in compaction observed during isochronal annealing, the loss coefficient exhibited a distinct minimum of /spl sim/0.15 dB/cm at an intermediate temperature of 500/spl deg/C. This feature was consistent with the removal of a specific defect or colour centre. Investigation of the annealing behaviour of the B/sub 2/-band indicated that this defect was not responsible for the observed loss behaviour nor was the decrease in refractive index. Surface cracking was observed for C, Si, and Ge-implantations at doses around 8/spl times/10/sup 13//cm/sup 2/, an effect exaggerated for the lighter ions.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Ion-implanted waveguide formation in silica\",\"authors\":\"C. Johnson, M. Ridgway, P. Leech\",\"doi\":\"10.1109/COMMAD.1996.610158\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The optimum processing parameters for the fabrication of low-loss waveguides in fused silica by ion implantation and annealing have been determined through a comparison of implantation-induced physical and optical properties. The step height at an implanted/unimplanted boundary resulting from Si implantation was measured as a function of ion dose (2/spl times/10/sup 12/-6/spl times/10/sup 16//cm/sup 2/), post-implantation annealing temperature (200-900/spl deg/C) and time (0-2.5 hr). For a given ion energy (5 MeV), the compaction increased for doses </spl sim/10/sup 15//cm/sup 2/ and thereafter, saturated. Isochronal and isothermal annealing both resulted in a non-linear reduction in compaction, typical of a thermally-induced process. In contrast to the continual reduction in compaction observed during isochronal annealing, the loss coefficient exhibited a distinct minimum of /spl sim/0.15 dB/cm at an intermediate temperature of 500/spl deg/C. This feature was consistent with the removal of a specific defect or colour centre. Investigation of the annealing behaviour of the B/sub 2/-band indicated that this defect was not responsible for the observed loss behaviour nor was the decrease in refractive index. Surface cracking was observed for C, Si, and Ge-implantations at doses around 8/spl times/10/sup 13//cm/sup 2/, an effect exaggerated for the lighter ions.\",\"PeriodicalId\":171952,\"journal\":{\"name\":\"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1996.610158\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1996.610158","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The optimum processing parameters for the fabrication of low-loss waveguides in fused silica by ion implantation and annealing have been determined through a comparison of implantation-induced physical and optical properties. The step height at an implanted/unimplanted boundary resulting from Si implantation was measured as a function of ion dose (2/spl times/10/sup 12/-6/spl times/10/sup 16//cm/sup 2/), post-implantation annealing temperature (200-900/spl deg/C) and time (0-2.5 hr). For a given ion energy (5 MeV), the compaction increased for doses
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