量子受限结构中电场相关吸收系数的测量方法

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610128

J. Siliquini, M.G. Xu, G.A. Umana Membreno, A. Clark, J. Dell

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引用次数: 2

摘要

综述了测量量子受限结构中电场依赖吸收系数的方法。提出的方法是基于薄膜结构的近似建模，考虑了空气-半导体界面处的反射和结构内的干涉效应。结果表明，根据测量的光电流和传输功率来确定吸收系数对测量误差的影响是最可靠的，并且对于完整的调制器结构最容易实现。

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Methods of measuring the electric-field-dependent absorbtion coefficient in quantum confined structures

A review of methods measuring the electric-field-dependent absorption coefficient in quantum confined structures is presented. The methods proposed are based on an approximate modeling of a thin film structure which takes into account the reflections at the air-semiconductor interfaces and interference effects within the structure. It is shown that determination of the absorption coefficient from the measured photocurrent and transmitted power is the most robust against measurement errors and easiest to implement for complete modulator structures.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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